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IRLZ44NLPBF Datasheet and Replacement


   Type Designator: IRLZ44NLPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 84 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO262 TO262AA

 IRLZ44NLPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLZ44NLPBF Datasheet (PDF)

 ..1. Size:340K  international rectifier
 irlz44nlpbf irlz44nspbf.pdf pdf_icon

IRLZ44NLPBF

IRLZ44NS/LPbF l Logic-Level Gate Drive l Advanced Process Technology D l Surface Mount (IRLZ44NS) DSS l Low-profile through-hole (IRLZ44NL) l 175 C Operating Temperature DS(on) l Fast Switching G l Fully Avalanche Rated D l Lead-Free S Description ... See More ⇒

 6.1. Size:340K  international rectifier
 irlz44ns irlz44nl.pdf pdf_icon

IRLZ44NLPBF

IRLZ44NS/LPbF l Logic-Level Gate Drive l Advanced Process Technology D l Surface Mount (IRLZ44NS) DSS l Low-profile through-hole (IRLZ44NL) l 175 C Operating Temperature DS(on) l Fast Switching G l Fully Avalanche Rated D l Lead-Free S Description ... See More ⇒

 7.1. Size:102K  international rectifier
 irlz44n.pdf pdf_icon

IRLZ44NLPBF

PD - 9.1346B IRLZ44N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.022 Fast Switching G Fully Avalanche Rated ID = 47A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistan... See More ⇒

 7.2. Size:223K  international rectifier
 irlz44npbf.pdf pdf_icon

IRLZ44NLPBF

PD - 94831 IRLZ44NPbF HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 55V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.022 l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 47A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest ... See More ⇒

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Datasheet: IRFL9014PBF , IRFL9110PBF , IRLZ44PBF , IRLZ44S , IRLZ44SPBF , IRLZ44ZLPBF , IRLZ44ZPBF , IRLZ44ZSPBF , IRF640 , IRLZ44NPBF , IRLZ44NSPBF , IRLZ34L , IRLZ34NLPBF , IRLZ34NPBF , IRLZ34NSPBF , IRLZ34PBF , IRLZ34S .

Keywords - IRLZ44NLPBF MOSFET datasheet

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