IRLZ34NPBF Todos los transistores

 

IRLZ34NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLZ34NPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 68 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: TO220AB
 

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IRLZ34NPBF Datasheet (PDF)

 ..1. Size:230K  international rectifier
irlz34npbf.pdf pdf_icon

IRLZ34NPBF

PD - 94830IRLZ34NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.035l Fully Avalanche RatedGl Lead-FreeID = 30ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest

 7.1. Size:51K  international rectifier
irlz34n 1.pdf pdf_icon

IRLZ34NPBF

Philips Semiconductors Product specification N-channel enhancement mode IRLZ34N Logic level TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 30 A

 7.2. Size:293K  international rectifier
irlz34nspbf irlz34nlpbf.pdf pdf_icon

IRLZ34NPBF

PD - 95583IRLZ34NSPbFIRLZ34NLPbFl Logic-Level Gate Drive HEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRLZ34NS)VDSS = 55Vl Low-profile through-hole (IRLZ34NL)l 175C Operating TemperatureRDS(on) = 0.035l Fast SwitchingGl Fully Avalanche RatedID = 30Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutiliz

 7.3. Size:104K  international rectifier
irlz34n.pdf pdf_icon

IRLZ34NPBF

PD - 9.1307BIRLZ34NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.035 Fast SwitchingG Fully Avalanche RatedID = 30ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistan

Otros transistores... IRLZ44ZLPBF , IRLZ44ZPBF , IRLZ44ZSPBF , IRLZ44NLPBF , IRLZ44NPBF , IRLZ44NSPBF , IRLZ34L , IRLZ34NLPBF , 10N60 , IRLZ34NSPBF , IRLZ34PBF , IRLZ34S , IRLZ34SPBF , IRLZ24L , IRLZ24LPBF , IRLZ24NLPBF , IRLZ24NPBF .

History: IRFR120 | AO4472 | MTD5P06VT4 | SSI4N90AS | WSF15N10A | IPI45P03P4L-11 | FQU2N90TUAM002

 

 
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