IRLZ34NPBF Todos los transistores

 

IRLZ34NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLZ34NPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 68 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 16 V

Corriente continua de drenaje (Id): 30 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Tiempo de elevación (tr): 100 nS

Conductancia de drenaje-sustrato (Cd): 220 pF

Resistencia drenaje-fuente RDS(on): 0.035 Ohm

Empaquetado / Estuche: TO220AB

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IRLZ34NPBF Datasheet (PDF)

1.1. irlz34npbf.pdf Size:225K _upd

IRLZ34NPBF
IRLZ34NPBF

PD - 94830 IRLZ34NPbF HEXFET® Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 55V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.035Ω l Fully Avalanche Rated G l Lead-Free ID = 30A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest

3.1. irlz34nspbf irlz34nlpbf.pdf Size:293K _upd

IRLZ34NPBF
IRLZ34NPBF

PD - 95583 IRLZ34NSPbF IRLZ34NLPbF l Logic-Level Gate Drive HEXFET® Power MOSFET l Advanced Process Technology D l Surface Mount (IRLZ34NS) VDSS = 55V l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature RDS(on) = 0.035Ω l Fast Switching G l Fully Avalanche Rated ID = 30A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utiliz

3.2. irlz34n 1.pdf Size:51K _philips

IRLZ34NPBF
IRLZ34NPBF

Philips Semiconductors Product specification N-channel enhancement mode IRLZ34N Logic level TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 30 A low on

 3.3. irlz34n 1.pdf Size:51K _international_rectifier

IRLZ34NPBF
IRLZ34NPBF

Philips Semiconductors Product specification N-channel enhancement mode IRLZ34N Logic level TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 30 A low on

3.4. irlz34n.pdf Size:104K _international_rectifier

IRLZ34NPBF
IRLZ34NPBF

PD - 9.1307B IRLZ34N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.035? Fast Switching G Fully Avalanche Rated ID = 30A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per

 3.5. irlz34ns.pdf Size:180K _international_rectifier

IRLZ34NPBF
IRLZ34NPBF

PD - 91308A IRLZ34NS/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Surface Mount (IRLZ34NS) Low-profile through-hole (IRLZ34NL) 175C Operating Temperature RDS(on) = 0.035? Fast Switching G Fully Avalanche Rated ID = 30A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ach

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