IRLZ34NPBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLZ34NPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 68 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 16 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 30 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 100 nS
Drain-Source Capacitance (Cd): 220 pF
Maximum Drain-Source On-State Resistance (Rds): 0.035 Ohm
Package: TO220AB
IRLZ34NPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLZ34NPBF Datasheet (PDF)
1.1. irlz34npbf.pdf 
Size:225K _upd
PD - 94830 IRLZ34NPbF HEXFET® Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 55V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.035Ω l Fully Avalanche Rated G l Lead-Free ID = 30A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest
3.1. irlz34nspbf irlz34nlpbf.pdf Size:293K _upd
PD - 95583 IRLZ34NSPbF IRLZ34NLPbF l Logic-Level Gate Drive HEXFET® Power MOSFET l Advanced Process Technology D l Surface Mount (IRLZ34NS) VDSS = 55V l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature RDS(on) = 0.035Ω l Fast Switching G l Fully Avalanche Rated ID = 30A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utiliz
3.2. irlz34n 1.pdf Size:51K _philips
Philips Semiconductors Product specification N-channel enhancement mode IRLZ34N Logic level TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 30 A low on
3.3. irlz34n 1.pdf Size:51K _international_rectifier
Philips Semiconductors Product specification N-channel enhancement mode IRLZ34N Logic level TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 30 A low on
3.4. irlz34n.pdf Size:104K _international_rectifier
PD - 9.1307B IRLZ34N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.035? Fast Switching G Fully Avalanche Rated ID = 30A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per
3.5. irlz34ns.pdf Size:180K _international_rectifier
PD - 91308A IRLZ34NS/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Surface Mount (IRLZ34NS) Low-profile through-hole (IRLZ34NL) 175C Operating Temperature RDS(on) = 0.035? Fast Switching G Fully Avalanche Rated ID = 30A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ach
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