IRLZ24NPBF Todos los transistores

 

IRLZ24NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLZ24NPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 45 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 16 V

Corriente continua de drenaje (Id): 18 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Tiempo de elevación (tr): 74 nS

Conductancia de drenaje-sustrato (Cd): 130 pF

Resistencia drenaje-fuente RDS(on): 0.06 Ohm

Empaquetado / Estuche: TO220AB

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IRLZ24NPBF Datasheet (PDF)

1.1. irlz24npbf.pdf Size:765K _upd

IRLZ24NPBF
IRLZ24NPBF

PD - 94998 IRLZ24NPbF • Lead-Free www.irf.com 1 2/11/04 IRLZ24NPbF 2 www.irf.com IRLZ24NPbF www.irf.com 3 IRLZ24NPbF 4 www.irf.com IRLZ24NPbF www.irf.com 5 IRLZ24NPbF 6 www.irf.com IRLZ24NPbF www.irf.com 7 IRLZ24NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.13

3.1. irlz24nlpbf irlz24nspbf.pdf Size:301K _upd

IRLZ24NPBF
IRLZ24NPBF

PD - 95584 IRLZ24NSPbF IRLZ24NLPbF l Logic-Level Gate Drive HEXFET® Power MOSFET l Advanced Process Technology l Surface Mount (IRLZ24NS) D VDSS = 55V l Low-profile through-hole (IRLZ24NL) l 175°C Operating Temperature RDS(on) = 0.06Ω l Fast Switching G l Fully Avalanche Rated ID = 18A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize

3.2. auirlz24nl auirlz24ns.pdf Size:271K _international_rectifier

IRLZ24NPBF
IRLZ24NPBF

AUIRLZ24NS AUTOMOTIVE GRADE AUIRLZ24NL Features HEXFET® Power MOSFET D l Advanced Process Technology VDSS 55V l Logic Level Gate Drive l 175°C Operating Temperature RDS(on) max. 0.06 Ω l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID 18A l Lead-Free, RoHS Compliant S l Automotive Qualified * D D Description Specifically designed for Automotive application

 3.3. irlz24ns.pdf Size:191K _international_rectifier

IRLZ24NPBF
IRLZ24NPBF

PD - 91358E IRLZ24NS/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Surface Mount (IRLZ24NS) Low-profile through-hole (IRLZ24NL) 175C Operating Temperature RDS(on) = 0.06? Fast Switching G Fully Avalanche Rated ID = 18A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi

3.4. irlz24n.pdf Size:109K _international_rectifier

IRLZ24NPBF
IRLZ24NPBF

PD - 9.1357A IRLZ24N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.06? Fast Switching G Fully Avalanche Rated ID = 18A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-res

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