IRLZ14PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLZ14PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 43 W
Tensión drenaje-fuente (Vds): 60 V
Tensión compuerta-fuente (Vgs): 10 V
Corriente continua de drenaje (Id): 10 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 2 V
Tiempo de elevación (tr): 110 nS
Conductancia de drenaje-sustrato (Cd): 170 pF
Resistencia drenaje-fuente RDS(on): 0.2 Ohm
Empaquetado / Estuche: TO220AB
Búsqueda de reemplazo de MOSFET IRLZ14PBF
IRLZ14PBF Datasheet (PDF)
1.1. irlz14pbf.pdf 
Size:1086K _upd
IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • Logic-Level Gate Drive RDS(on) (Ω)VGS = 5.0 V 0.20 RoHS* Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qgs (nC) 3.5 • 175 °C Operating Temperature Qgd (nC) 6.0 • Fast Switching Configuration Single • Ease of Paralleling D
1.2. irlz14pbf.pdf Size:253K _international_rectifier
PD - 95457 IRLZ14PbF Lead-Free 6/23/04 Document Number: 91325 www.vishay.com 1 IRLZ14PbF Document Number: 91325 www.vishay.com 2 IRLZ14PbF Document Number: 91325 www.vishay.com 3 IRLZ14PbF Document Number: 91325 www.vishay.com 4 IRLZ14PbF Document Number: 91325 www.vishay.com 5 IRLZ14PbF Document Number: 91325 www.vishay.com 6 IRLZ14PbF + Circuit Layout Consideration
4.1. irlz14l irlz14s.pdf Size:310K _upd
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition • Advanced Process Technology RDS(on) ()VGS = 5 V 0.20 • Surface Mount (IRLZ14S, SiHLZ14S) Qg (Max.) (nC) 8.4 • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) Qgs (nC) 3.5 • 175 °C Operating Temperature • Fast Sw
4.2. irlz14spbf.pdf Size:337K _upd
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition • Advanced Process Technology RDS(on) ()VGS = 5 V 0.20 • Surface Mount (IRLZ14S, SiHLZ14S) Qg (Max.) (nC) 8.4 • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) Qgs (nC) 3.5 • 175 °C Operating Temperature • Fast Sw
4.3. irlz14.pdf Size:170K _international_rectifier
4.4. irlz14s.pdf Size:291K _international_rectifier
PD - 9.903A IRLZ14S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRLZ14S) Low-profile through-hole (IRLZ14L) 175C Operating Temperature RDS(on) = 0.20? G Fast Switching ID = 10A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Th
4.5. irlz14s-l.pdf Size:199K _international_rectifier
PD - 9.903A IRLZ14S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRLZ14S) Low-profile through-hole (IRLZ14L) 175C Operating Temperature RDS(on) = 0.20? G Fast Switching ID = 10A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Th
4.6. irlz14a.pdf Size:209K _samsung
IRLZ14A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive ? RDS(on) = 0.155 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 10 A Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area A (Max.) @ VDS = 60V Lower Leakage Current : 10 Lower RDS(ON) : 0.122 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum
4.7. irlz14s irlz14l sihlz14s sihlz14l.pdf Size:312K _vishay
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) (?)VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S) Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) Qgs (nC) 3.5 175 C Operating Temperature Fast Switching Qgd (nC)
4.8. irlz14 sihlz14.pdf Size:1084K _vishay
IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) (?)VGS = 5.0 V 0.20 RoHS* Qg (Max.) (nC) 8.4 RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qgs (nC) 3.5 175 C Operating Temperature Qgd (nC) 6.0 Fast Switching Configuration Single Ease of Paralleling D Simple Drive Re
Otros transistores... PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .
