IRLZ14PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLZ14PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 43 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 10 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Tiempo de elevación (tr): 110 nS

Conductancia de drenaje-sustrato (Cd): 170 pF

Resistencia drenaje-fuente RDS(on): 0.2 Ohm

Empaquetado / Estuche: TO220AB

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IRLZ14PBF Datasheet (PDF)

1.1. irlz14pbf.pdf Size:1086K _upd

IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • Logic-Level Gate Drive RDS(on) (Ω)VGS = 5.0 V 0.20 RoHS* Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qgs (nC) 3.5 • 175 °C Operating Temperature Qgd (nC) 6.0 • Fast Switching Configuration Single • Ease of Paralleling D

1.2. irlz14pbf.pdf Size:253K _international_rectifier

PD - 95457 IRLZ14PbF � Lead-Free 6/23/04 Document Number: 91325 www.vishay.com 1 IRLZ14PbF Document Number: 91325 www.vishay.com 2 IRLZ14PbF Document Number: 91325 www.vishay.com 3 IRLZ14PbF Document Number: 91325 www.vishay.com 4 IRLZ14PbF Document Number: 91325 www.vishay.com 5 IRLZ14PbF Document Number: 91325 www.vishay.com 6 IRLZ14PbF + Circuit Layout Consideration

4.1. irlz14l irlz14s.pdf Size:310K _upd

IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition • Advanced Process Technology RDS(on) ()VGS = 5 V 0.20 • Surface Mount (IRLZ14S, SiHLZ14S) Qg (Max.) (nC) 8.4 • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) Qgs (nC) 3.5 • 175 °C Operating Temperature • Fast Sw

4.2. irlz14spbf.pdf Size:337K _upd

4.3. irlz14.pdf Size:170K _international_rectifier

4.4. irlz14s.pdf Size:291K _international_rectifier

PD - 9.903A IRLZ14S/L HEXFET� Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRLZ14S) Low-profile through-hole (IRLZ14L) 175�C Operating Temperature RDS(on) = 0.20? G Fast Switching ID = 10A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Th

4.5. irlz14s-l.pdf Size:199K _international_rectifier

4.6. irlz14a.pdf Size:209K _samsung

IRLZ14A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive ? RDS(on) = 0.155 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 10 A Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area �A (Max.) @ VDS = 60V Lower Leakage Current : 10 Lower RDS(ON) : 0.122 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum

4.7. irlz14s irlz14l sihlz14s sihlz14l.pdf Size:312K _vishay

IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition � Advanced Process Technology RDS(on) (?)VGS = 5 V 0.20 � Surface Mount (IRLZ14S, SiHLZ14S) Qg (Max.) (nC) 8.4 � Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) Qgs (nC) 3.5 � 175 �C Operating Temperature � Fast Switching Qgd (nC)

4.8. irlz14 sihlz14.pdf Size:1084K _vishay

IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Dynamic dV/dt Rating VDS (V) 60 Available � Logic-Level Gate Drive RDS(on) (?)VGS = 5.0 V 0.20 RoHS* Qg (Max.) (nC) 8.4 � RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qgs (nC) 3.5 � 175 �C Operating Temperature Qgd (nC) 6.0 � Fast Switching Configuration Single � Ease of Paralleling D � Simple Drive Re

Otros transistores... 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

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