IRLZ14SPBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLZ14SPBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 43 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 110 nS

Cossⓘ - Capacitancia de salida: 170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm

Encapsulados: TO263

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IRLZ14SPBF datasheet

 ..1. Size:337K  vishay
 irlz14spbf sihlz14l sihlz14s.pdf pdf_icon

IRLZ14SPBF

IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S) Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) Qgs (nC) 3.5 175 C Operating Temperature Fast Sw

 7.1. Size:291K  international rectifier
 irlz14s irlz14l.pdf pdf_icon

IRLZ14SPBF

PD - 9.903A IRLZ14S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRLZ14S) Low-profile through-hole (IRLZ14L) 175 C Operating Temperature RDS(on) = 0.20 G Fast Switching ID = 10A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a

 7.2. Size:310K  vishay
 irlz14l irlz14s.pdf pdf_icon

IRLZ14SPBF

IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S) Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) Qgs (nC) 3.5 175 C Operating Temperature Fast Sw

 7.3. Size:312K  vishay
 irlz14s irlz14l sihlz14s sihlz14l.pdf pdf_icon

IRLZ14SPBF

IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S) Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) Qgs (nC) 3.5 175 C Operating Temperature Fast Sw

MOSTRAR MÁS

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