IRLZ14SPBF Todos los transistores

 

IRLZ14SPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLZ14SPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 43 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 110 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: TO263
 

 Búsqueda de reemplazo de IRLZ14SPBF MOSFET

   - Selección ⓘ de transistores por parámetros

 

IRLZ14SPBF Datasheet (PDF)

 ..1. Size:337K  vishay
irlz14spbf sihlz14l sihlz14s.pdf pdf_icon

IRLZ14SPBF

IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S)Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)Qgs (nC) 3.5 175 C Operating Temperature Fast Sw

 7.1. Size:291K  international rectifier
irlz14s irlz14l.pdf pdf_icon

IRLZ14SPBF

PD - 9.903AIRLZ14S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRLZ14S) Low-profile through-hole (IRLZ14L) 175C Operating Temperature RDS(on) = 0.20G Fast SwitchingID = 10ASDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a

 7.2. Size:310K  vishay
irlz14l irlz14s.pdf pdf_icon

IRLZ14SPBF

IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S)Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)Qgs (nC) 3.5 175 C Operating Temperature Fast Sw

 7.3. Size:312K  vishay
irlz14s irlz14l sihlz14s sihlz14l.pdf pdf_icon

IRLZ14SPBF

IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S)Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)Qgs (nC) 3.5 175 C Operating Temperature Fast Sw

Otros transistores... IRLZ24NPBF , IRLZ24NSPBF , IRLZ24PBF , IRLZ24S , IRLZ24SPBF , IRLZ14L , IRLZ14PBF , IRLZ14S , 12N60 , IRLI2203NPBF , IRLI2910PBF , IRLI3705NPBF , IRLI3803PBF , IRLI520G , IRLI520GPBF , IRLI520NPBF , IRLI530G .

History: SI5513CDC | SSN3541 | IPP041N12N3G | IRF7309Q | IRFB11N50APBF | IRHYS597Z30CM | RU304B

 

 
Back to Top

 


 
.