IRLZ14SPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLZ14SPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 43 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 110 nS
Cossⓘ - Capacitancia de salida: 170 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de IRLZ14SPBF MOSFET
- Selecciónⓘ de transistores por parámetros
IRLZ14SPBF datasheet
irlz14spbf sihlz14l sihlz14s.pdf
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S) Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) Qgs (nC) 3.5 175 C Operating Temperature Fast Sw
irlz14s irlz14l.pdf
PD - 9.903A IRLZ14S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRLZ14S) Low-profile through-hole (IRLZ14L) 175 C Operating Temperature RDS(on) = 0.20 G Fast Switching ID = 10A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a
irlz14l irlz14s.pdf
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S) Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) Qgs (nC) 3.5 175 C Operating Temperature Fast Sw
irlz14s irlz14l sihlz14s sihlz14l.pdf
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S) Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) Qgs (nC) 3.5 175 C Operating Temperature Fast Sw
Otros transistores... IRLZ24NPBF , IRLZ24NSPBF , IRLZ24PBF , IRLZ24S , IRLZ24SPBF , IRLZ14L , IRLZ14PBF , IRLZ14S , STP75NF75 , IRLI2203NPBF , IRLI2910PBF , IRLI3705NPBF , IRLI3803PBF , IRLI520G , IRLI520GPBF , IRLI520NPBF , IRLI530G .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: ASB80R750E | ASB70R380E | ASB65R300E | ASB65R220E | ASB65R120EFD | ASB60R150E | ASA80R900E | ASA80R750E | ASA80R290E | ASA70R950E | ASA70R600E | ASA70R380E | ASA70R240E | ASA65R850E | ASA65R550E | ASA65R350E
Popular searches
2n333 | c3852 | irfp140 | ksc2383 datasheet | 2n3906 equivalent | a733 transistor equivalent | 2n5401 transistor datasheet | 2n2222 data sheet
