IRLI2203NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD- 95426IRLI2203NPbF Lead-Freewww.irf.com 106/17/04IRLI2203NPbF2 www.irf.comIRLI2203NPbFwww.irf.com 3IRLI2203NPbF4 www.irf.comIRLI2203NPbFwww.irf.com 5IRLI2203NPbF6 www.irf.comIRLI2203NPbFwww.irf.com 7IRLI2203NPbFTO-220 Full-Pak Package OutlineDimensions are shown in millimeters (inches)TO-220 Full-Pak Part Marking InformationE XAMP L E : T H

PD - 9.1378AIRLI2203NPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 30V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.007 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID = 61ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to ac

PD - 9.1092AIRLI2203GHEXFET Power MOSFETAdvanced Process TechnologyUltra Low On-ResistanceVDSS = 30VIsolated PackageHigh Voltage Isolation = 2.5KVRMS RDS(on) = 0.010Sink to Lead Creepage Dist. = 4.8mmLogic-Level Gate DriveRDS(on) Specified at VGS=5.0V & 10V ID = 52ADescriptionFourth Generation HEXFETs from International Rectifier utilize advancedprocessing techn

PD - 9.1327AIRLI2505HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.008G Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche RatedID = 58ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techni

PD - 97766AUTOMOTIVE GRADEAUIRLI2505Featuresl Advanced Planar TechnologyHEXFET Power MOSFETl Logic-Level Gate Drivel Low On-ResistanceV(BR)DSS 55Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) max. 8.0ml Fast Switchingl Fully Avalanche RatedID 58Al Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*Des

PD - 9.1384BIRLI2910PRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Isolated PackageRDS(on) = 0.026 High Voltage Isolation = 2.5KVRMS G Sink to Lead Creepage Dist. = 4.8mmID = 31A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced p

PD- 95652IRLI2910PbF Lead-Freewww.irf.com 17/26/04IRLI2910PbF2 www.irf.comIRLI2910PbFwww.irf.com 3IRLI2910PbF4 www.irf.comIRLI2910PbFwww.irf.com 5IRLI2910PbF6 www.irf.comIRLI2910PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Transformer-+

IRLI2910PbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 100V Isolated Package RDS(on) 0.026 High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm ID 31A Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier ut

isc N-Channel MOSFET Transistor IRLI2910,IIRLI2910FEATURESLow drain-source on-resistance:RDS(on) 26m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIt is intended for general purpose switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a