IRLI2203NPBF - описание и поиск аналогов

PD- 95426 IRLI2203NPbF Lead-Free www.irf.com 1 06/17/04 IRLI2203NPbF 2 www.irf.com IRLI2203NPbF www.irf.com 3 IRLI2203NPbF 4 www.irf.com IRLI2203NPbF www.irf.com 5 IRLI2203NPbF 6 www.irf.com IRLI2203NPbF www.irf.com 7 IRLI2203NPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information E XAMP L E T H

PD - 9.1378A IRLI2203N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 30V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.007 Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 61A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ac

PD - 9.1092A IRLI2203G HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS = 30V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.010 Sink to Lead Creepage Dist. = 4.8mm Logic-Level Gate Drive RDS(on) Specified at VGS=5.0V & 10V ID = 52A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techn

PD - 9.1327A IRLI2505 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.008 G Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID = 58A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni

PD - 97766 AUTOMOTIVE GRADE AUIRLI2505 Features l Advanced Planar Technology HEXFET Power MOSFET l Logic-Level Gate Drive l Low On-Resistance V(BR)DSS 55V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) max. 8.0m l Fast Switching l Fully Avalanche Rated ID 58A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* Des

PD - 9.1384B IRLI2910 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Isolated Package RDS(on) = 0.026 High Voltage Isolation = 2.5KVRMS G Sink to Lead Creepage Dist. = 4.8mm ID = 31A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced p

PD- 95652 IRLI2910PbF Lead-Free www.irf.com 1 7/26/04 IRLI2910PbF 2 www.irf.com IRLI2910PbF www.irf.com 3 IRLI2910PbF 4 www.irf.com IRLI2910PbF www.irf.com 5 IRLI2910PbF 6 www.irf.com IRLI2910PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - +

IRLI2910PbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 100V Isolated Package RDS(on) 0.026 High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm ID 31A Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier ut

isc N-Channel MOSFET Transistor IRLI2910,IIRLI2910 FEATURES Low drain-source on-resistance RDS(on) 26m (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION It is intended for general purpose switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a