IRLI2910PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLI2910PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 63 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 31 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 140 nC
   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 630 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
   Paquete / Cubierta: TO220F

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IRLI2910PBF Datasheet (PDF)

..1. Size:369K international rectifier
irli2910pbf.pdf

PD- 95652IRLI2910PbF Lead-Freewww.irf.com 17/26/04IRLI2910PbF2 www.irf.comIRLI2910PbFwww.irf.com 3IRLI2910PbF4 www.irf.comIRLI2910PbFwww.irf.com 5IRLI2910PbF6 www.irf.comIRLI2910PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Transformer-+

..2. Size:595K infineon
irli2910pbf.pdf

IRLI2910PbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 100V Isolated Package RDS(on) 0.026 High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm ID 31A Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier ut

6.1. Size:143K international rectifier
irli2910.pdf

PD - 9.1384BIRLI2910PRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Isolated PackageRDS(on) = 0.026 High Voltage Isolation = 2.5KVRMS G Sink to Lead Creepage Dist. = 4.8mmID = 31A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced p

6.2. Size:256K inchange semiconductor
irli2910.pdf

isc N-Channel MOSFET Transistor IRLI2910,IIRLI2910FEATURESLow drain-source on-resistance:RDS(on) 26m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIt is intended for general purpose switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

9.1. Size:103K international rectifier
irli2505.pdf

PD - 9.1327AIRLI2505HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.008G Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche RatedID = 58ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techni

9.2. Size:156K international rectifier
irli2203g.pdf

PD - 9.1092AIRLI2203GHEXFET Power MOSFETAdvanced Process TechnologyUltra Low On-ResistanceVDSS = 30VIsolated PackageHigh Voltage Isolation = 2.5KVRMS RDS(on) = 0.010Sink to Lead Creepage Dist. = 4.8mmLogic-Level Gate DriveRDS(on) Specified at VGS=5.0V & 10V ID = 52ADescriptionFourth Generation HEXFETs from International Rectifier utilize advancedprocessing techn

9.3. Size:242K international rectifier
auirli2505.pdf

PD - 97766AUTOMOTIVE GRADEAUIRLI2505Featuresl Advanced Planar TechnologyHEXFET Power MOSFETl Logic-Level Gate Drivel Low On-ResistanceV(BR)DSS 55Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) max. 8.0ml Fast Switchingl Fully Avalanche RatedID 58Al Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*Des

9.4. Size:605K international rectifier
irli2203npbf.pdf

PD- 95426IRLI2203NPbF Lead-Freewww.irf.com 106/17/04IRLI2203NPbF2 www.irf.comIRLI2203NPbFwww.irf.com 3IRLI2203NPbF4 www.irf.comIRLI2203NPbFwww.irf.com 5IRLI2203NPbF6 www.irf.comIRLI2203NPbFwww.irf.com 7IRLI2203NPbFTO-220 Full-Pak Package OutlineDimensions are shown in millimeters (inches)TO-220 Full-Pak Part Marking InformationE XAMP L E : T H

9.5. Size:113K international rectifier
irli2203n.pdf

PD - 9.1378AIRLI2203NPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 30V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.007 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID = 61ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to ac

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