All MOSFET. IRLI2910PBF Datasheet

 

IRLI2910PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLI2910PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 31 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 140 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 630 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: TO220F

 IRLI2910PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLI2910PBF Datasheet (PDF)

 ..1. Size:369K  international rectifier
irli2910pbf.pdf

IRLI2910PBF IRLI2910PBF

PD- 95652IRLI2910PbF Lead-Freewww.irf.com 17/26/04IRLI2910PbF2 www.irf.comIRLI2910PbFwww.irf.com 3IRLI2910PbF4 www.irf.comIRLI2910PbFwww.irf.com 5IRLI2910PbF6 www.irf.comIRLI2910PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Transformer-+

 ..2. Size:595K  infineon
irli2910pbf.pdf

IRLI2910PBF IRLI2910PBF

IRLI2910PbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 100V Isolated Package RDS(on) 0.026 High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm ID 31A Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier ut

 6.1. Size:143K  international rectifier
irli2910.pdf

IRLI2910PBF IRLI2910PBF

PD - 9.1384BIRLI2910PRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Isolated PackageRDS(on) = 0.026 High Voltage Isolation = 2.5KVRMS G Sink to Lead Creepage Dist. = 4.8mmID = 31A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced p

 6.2. Size:256K  inchange semiconductor
irli2910.pdf

IRLI2910PBF IRLI2910PBF

isc N-Channel MOSFET Transistor IRLI2910,IIRLI2910FEATURESLow drain-source on-resistance:RDS(on) 26m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIt is intended for general purpose switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 9.1. Size:103K  international rectifier
irli2505.pdf

IRLI2910PBF IRLI2910PBF

PD - 9.1327AIRLI2505HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.008G Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche RatedID = 58ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techni

 9.2. Size:156K  international rectifier
irli2203g.pdf

IRLI2910PBF IRLI2910PBF

PD - 9.1092AIRLI2203GHEXFET Power MOSFETAdvanced Process TechnologyUltra Low On-ResistanceVDSS = 30VIsolated PackageHigh Voltage Isolation = 2.5KVRMS RDS(on) = 0.010Sink to Lead Creepage Dist. = 4.8mmLogic-Level Gate DriveRDS(on) Specified at VGS=5.0V & 10V ID = 52ADescriptionFourth Generation HEXFETs from International Rectifier utilize advancedprocessing techn

 9.3. Size:242K  international rectifier
auirli2505.pdf

IRLI2910PBF IRLI2910PBF

PD - 97766AUTOMOTIVE GRADEAUIRLI2505Featuresl Advanced Planar TechnologyHEXFET Power MOSFETl Logic-Level Gate Drivel Low On-ResistanceV(BR)DSS 55Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) max. 8.0ml Fast Switchingl Fully Avalanche RatedID 58Al Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*Des

 9.4. Size:605K  international rectifier
irli2203npbf.pdf

IRLI2910PBF IRLI2910PBF

PD- 95426IRLI2203NPbF Lead-Freewww.irf.com 106/17/04IRLI2203NPbF2 www.irf.comIRLI2203NPbFwww.irf.com 3IRLI2203NPbF4 www.irf.comIRLI2203NPbFwww.irf.com 5IRLI2203NPbF6 www.irf.comIRLI2203NPbFwww.irf.com 7IRLI2203NPbFTO-220 Full-Pak Package OutlineDimensions are shown in millimeters (inches)TO-220 Full-Pak Part Marking InformationE XAMP L E : T H

 9.5. Size:113K  international rectifier
irli2203n.pdf

IRLI2910PBF IRLI2910PBF

PD - 9.1378AIRLI2203NPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 30V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.007 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID = 61ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to ac

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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