IRLI540G Todos los transistores

 

IRLI540G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLI540G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 170 nS
   Cossⓘ - Capacitancia de salida: 560 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.077 Ohm
   Paquete / Cubierta: TO220F
 

 Búsqueda de reemplazo de IRLI540G MOSFET

   - Selección ⓘ de transistores por parámetros

 

IRLI540G datasheet

 ..1. Size:157K  international rectifier
 irli540g.pdf pdf_icon

IRLI540G

Document Number 90399 www.vishay.com 1391 Document Number 90399 www.vishay.com 1392 Document Number 90399 www.vishay.com 1393 Document Number 90399 www.vishay.com 1394 Document Number 90399 www.vishay.com 1395 Document Number 90399 www.vishay.com 1396 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as

 ..2. Size:1502K  vishay
 irli540g irli540gpbf sihli540g.pdf pdf_icon

IRLI540G

IRLI540G, SiHLI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5 V 0.077 f = 60 Hz) Qg (Max.) (nC) 64 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 9.4 Logic-Level Gate Drive Qgd (nC) 27 RDS (on) Specified at VGS = 4 V and 5 V Fast Switching Configur

 7.1. Size:344K  1
 irli540a irlw540a.pdf pdf_icon

IRLI540G

 7.2. Size:258K  international rectifier
 irli540npbf.pdf pdf_icon

IRLI540G

PD -95454 IRLI540NPbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Isolated Package VDSS = 100V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.044 l Fully Avalanche Rated G l Lead-Free ID = 23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

MOSTRAR MÁS

Otros transistores... IRLI2910PBF , IRLI3705NPBF , IRLI3803PBF , IRLI520G , IRLI520GPBF , IRLI520NPBF , IRLI530G , IRLI530GPBF , SKD502T , IRLI540GPBF , IRLI540NPBF , IRLI620GPBF , IRLI630GPBF , IRLI640GPBF , IRLIB4343 , IRLIB9343PBF , IRLIZ14GPBF .

History: JMSH1018PGD | BF1101 | AGM15T13F | PA910BD | SSM40N03P | P057AAT | CEB6060N

 

 
Back to Top

 


 
.