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IRLI540G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLI540G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 48 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 17 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Tiempo de elevación (tr): 170 nS

Conductancia de drenaje-sustrato (Cd): 560 pF

Resistencia drenaje-fuente RDS(on): 0.077 Ohm

Empaquetado / Estuche: TO220F

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IRLI540G Datasheet (PDF)

1.1. irli540g irli540gpbf.pdf Size:1502K _upd

IRLI540G
IRLI540G

IRLI540G, SiHLI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 100 • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (Ω)VGS = 5 V 0.077 f = 60 Hz) Qg (Max.) (nC) 64 • Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 9.4 • Logic-Level Gate Drive Qgd (nC) 27 • RDS (on) Specified at VGS = 4 V and 5 V • Fast Switching Configur

1.2. irli540g.pdf Size:157K _international_rectifier

IRLI540G
IRLI540G

Document Number: 90399 www.vishay.com 1391 Document Number: 90399 www.vishay.com 1392 Document Number: 90399 www.vishay.com 1393 Document Number: 90399 www.vishay.com 1394 Document Number: 90399 www.vishay.com 1395 Document Number: 90399 www.vishay.com 1396 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as par

 3.1. irli540npbf.pdf Size:258K _upd

IRLI540G
IRLI540G

PD -95454 IRLI540NPbF HEXFET® Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Isolated Package VDSS = 100V l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.044Ω l Fully Avalanche Rated G l Lead-Free ID = 23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

3.2. irli540n.pdf Size:122K _international_rectifier

IRLI540G
IRLI540G

PD - 9.1497A IRLI540N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.044? Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 23A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

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