IRFF9112 Todos los transistores

 

IRFF9112 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFF9112

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 15 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 2.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Tiempo de elevación (tr): 30 nS

Conductancia de drenaje-sustrato (Cd): 85 pF

Resistencia drenaje-fuente RDS(on): 1.2 Ohm

Empaquetado / Estuche: TO39

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IRFF9112 Datasheet (PDF)

1.1. irff9110 irff9111 irff9112 irff9113.pdf Size:974K _upd

IRFF9112
IRFF9112



3.1. irff9110.pdf Size:132K _international_rectifier

IRFF9112
IRFF9112

PD - 90388 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-205AF) IRFF9110 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9110 -100V 1.2? -2.5A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: ve

 4.1. irff9130 irff9131 irff9132 irff9133.pdf Size:682K _upd

IRFF9112
IRFF9112



4.2. 2n6849 irff9130.pdf Size:133K _international_rectifier

IRFF9112
IRFF9112

PD - 90550D IRFF9130 JANTX2N6849 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6849 HEXFET?TRANSISTORS JANS2N6849 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/564 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9130 -100V 0.30? -6.5A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique pr

 4.3. 2n6845 irff9120.pdf Size:130K _international_rectifier

IRFF9112
IRFF9112

PD - 90552C IRFF9120 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6845 HEXFET?TRANSISTORS JANTXV2N6845 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/563 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9120 -100V 0.60? -4.0A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of th

Otros transistores... IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 
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