IRFF9112 Datasheet and Replacement
Type Designator: IRFF9112
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 85 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO39
IRFF9112 substitution
IRFF9112 Datasheet (PDF)
irff9110.pdf

PD - 90388REPETITIVE AVALANCHE AND dv/dt RATEDHEXFETTRANSISTORSTHRU-HOLE (TO-205AF) IRFF9110100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRFF9110 -100V 1.2 -2.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desi
2n6849 irff9130.pdf

PD - 90550DIRFF9130 JANTX2N6849REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6849HEXFETTRANSISTORS JANS2N6849THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/564100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRFF9130 -100V 0.30 -6.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry an
2n6845 irff9120.pdf

PD - 90552CIRFF9120REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6845HEXFETTRANSISTORS JANTXV2N6845THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/563100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF9120 -100V 0.60 -4.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proce
Datasheet: IRLIB9343PBF , IRLIZ14GPBF , IRLIZ24NPBF , IRLIZ34GPBF , IRLIZ34NPBF , IRLIZ44GPBF , IRLIZ44NPBF , IRFF9111 , IRFZ24N , IRFF9113 , IRFF9131 , IRFF9132 , IRFF9133 , IRFF9231 , IRFF9232 , IRFF9233 , IRF9131 .
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