IRF9151 Todos los transistores

 

IRF9151 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF9151
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 150 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 25 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 82 nC
   Tiempo de subida (tr): 110 nS
   Conductancia de drenaje-sustrato (Cd): 850 pF
   Resistencia entre drenaje y fuente RDS(on): 0.15 Ohm
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de MOSFET IRF9151

 

IRF9151 Datasheet (PDF)

 ..1. Size:117K  njs
irf9150 irf9151.pdf

IRF9151
IRF9151

 8.1. Size:245K  inchange semiconductor
irf9150.pdf

IRF9151
IRF9151

isc P-Channel MOSFET Transistor IRF9150FEATURESStatic drain-source on-resistance:RDS(on)0.15100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONBe designed for applications such as switching regulators,switching convertors, motor drivers, relay drivers, and driversfor high power bipolar switching

 9.1. Size:149K  international rectifier
2n6804 irf9130.pdf

IRF9151
IRF9151

PD - 90549CIRF9130REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804HEXFETTRANSISTORS JANTXV2N6804THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562]100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF9130 -100V 0.30 -11AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique pr

 9.2. Size:148K  international rectifier
irf9140.pdf

IRF9151
IRF9151

PD - 93976AREPETITIVE AVALANCHE AND dv/dt RATED IRF9140HEXFETTRANSISTORS 100V, P-CHANNELTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF9140 -100V 0.2 -18AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desig

 9.3. Size:520K  samsung
irfp9130-33 irf9130-33 irf9530-33.pdf

IRF9151
IRF9151

 9.4. Size:520K  samsung
irf9130-33 irfp9130-33 irf9530-33.pdf

IRF9151
IRF9151

 9.5. Size:18K  semelab
irf9130smd05 irfnj9130.pdf

IRF9151
IRF9151

IRFNJ9130IRF9130SMD05MECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET7.54 (0.296)FOR HIREL0.76 (0.030)min.APPLICATIONS3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005)1 3VDSS -100VID(cont) -11A2RDS(on) 0.30 0.127 (0.005) FEATURES16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020) HERMETICALLY SEALED max.7.26 (

 9.6. Size:20K  semelab
irf9130smd.pdf

IRF9151
IRF9151

IRF9130SMDMECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET FOR HIREL APPLICATIONS VDSS -100VID(cont) -8A RDS(on) 0.35FEATURES HERMETICALLY SEALED SIMPLE DRIVE REQUI

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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