IRF9151 - описание и поиск аналогов

isc P-Channel MOSFET Transistor IRF9150 FEATURES Static drain-source on-resistance RDS(on) 0.15 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Be designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching

PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804 HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF9130 -100V 0.30 -11A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique pr

PD - 93976A REPETITIVE AVALANCHE AND dv/dt RATED IRF9140 HEXFET TRANSISTORS 100V, P-CHANNEL THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF9140 -100V 0.2 -18A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art desig

IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm (inches) P CHANNEL POWER MOSFET 7.54 (0.296) FOR HI REL 0.76 (0.030) min. APPLICATIONS 3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005) 1 3 VDSS -100V ID(cont) -11A 2 RDS(on) 0.30 0.127 (0.005) FEATURES 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) HERMETICALLY SEALED max. 7.26 (

IRF9130SMD MECHANICAL DATA Dimensions in mm (inches) P CHANNEL POWER MOSFET FOR HI REL APPLICATIONS VDSS -100V ID(cont) -8A RDS(on) 0.35 FEATURES HERMETICALLY SEALED SIMPLE DRIVE REQUI