IRFL214 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFL214
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.79 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.6 nS
Cossⓘ - Capacitancia de salida: 42 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de MOSFET IRFL214
IRFL214 Datasheet (PDF)
irfl214pbf.pdf
PD-95318IRFL214PbFHEXFET Power MOSFET Surface MountD Available in Tape & ReelVDSS = 250V Dynamic dv/dt Rating Repetitive Avalanche Rated Fast SwitchingRDS(on) = 2.0 Ease of ParallelingG Simple Drive Requirements Lead-FreeID = 0.79ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fastsw
irfl214 sihfl214.pdf
IRFL214, SiHFL214Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 250DefinitionRDS(on) ()VGS = 10 V 2.0 Surface MountQg (Max.) (nC) 8.2 Available in Tape and ReelQgs (nC) 1.8 Dynamic dV/dt RatingQgd (nC) 4.5 Repetitive Avalanche RatedConfiguration Single Fast Switching Ease of Parallelin
irfl210pbf.pdf
PD- 95228IRFL210PbF Lead-Free04/28/04Document Number: 91193 www.vishay.com1IRFL210PbFDocument Number: 91193 www.vishay.com2IRFL210PbFDocument Number: 91193 www.vishay.com3IRFL210PbFDocument Number: 91193 www.vishay.com4IRFL210PbFDocument Number: 91193 www.vishay.com5IRFL210PbFDocument Number: 91193 www.vishay.com6IRFL210PbFDocument Number: 91
irfl210 sihfl210.pdf
IRFL210, SiHFL210Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200DefinitionRDS(on) ()VGS = 10 V 1.5 Surface MountQg (Max.) (nC) 8.2 Available in Tape and ReelQgs (nC) 1.8 Dynamic dV/dt RatingQgd (nC) 4.5 Repetitive Avalanche RatedConfiguration Single Fast Switching Ease of Parallelin
irfl210trpbf.pdf
IRFL210TRPBFwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Available in tape and reelVDS (V) 200 Dynamic dV/dt ratingRDS(on) ()VGS = 10 V 1.2 Repetitive avalanche ratedQg (Max.) (nC) 8.2 Fast switchingQgs (nC) 1.8 Ease of parallelingAvailableQgd (nC) 4.5 Simple drive requirementsConfiguration SingleDSOT-223DGSD
Otros transistores... IRFIZ44N , IRFIZ46N , IRFIZ48N , IRFL014 , IRFL024N , IRFL1006 , IRFL110 , IRFL210 , IRF9540 , IRFL4105 , IRFL4310 , IRFL9014 , IRFL9110 , IRFM014A , IRFM044 , IRFM054 , IRFM110A .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918