IRFL214 Todos los transistores

PD-95318 IRFL214PbF HEXFET Power MOSFET Surface Mount D Available in Tape & Reel VDSS = 250V Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching RDS(on) = 2.0 Ease of Paralleling G Simple Drive Requirements Lead-Free ID = 0.79A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast sw

IRFL214, SiHFL214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 250 Definition RDS(on) ( )VGS = 10 V 2.0 Surface Mount Qg (Max.) (nC) 8.2 Available in Tape and Reel Qgs (nC) 1.8 Dynamic dV/dt Rating Qgd (nC) 4.5 Repetitive Avalanche Rated Configuration Single Fast Switching Ease of Parallelin

PD- 95228 IRFL210PbF Lead-Free 04/28/04 Document Number 91193 www.vishay.com 1 IRFL210PbF Document Number 91193 www.vishay.com 2 IRFL210PbF Document Number 91193 www.vishay.com 3 IRFL210PbF Document Number 91193 www.vishay.com 4 IRFL210PbF Document Number 91193 www.vishay.com 5 IRFL210PbF Document Number 91193 www.vishay.com 6 IRFL210PbF Document Number 91

IRFL210, SiHFL210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition RDS(on) ( )VGS = 10 V 1.5 Surface Mount Qg (Max.) (nC) 8.2 Available in Tape and Reel Qgs (nC) 1.8 Dynamic dV/dt Rating Qgd (nC) 4.5 Repetitive Avalanche Rated Configuration Single Fast Switching Ease of Parallelin

IRFL210TRPBF www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Available in tape and reel VDS (V) 200 Dynamic dV/dt rating RDS(on) ( )VGS = 10 V 1.2 Repetitive avalanche rated Qg (Max.) (nC) 8.2 Fast switching Qgs (nC) 1.8 Ease of paralleling Available Qgd (nC) 4.5 Simple drive requirements Configuration Single D SOT-223 D G S D