IRFR7546PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFR7546PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 99 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 56 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.7 VQgⓘ - Carga de la puerta: 58 nC
trⓘ - Tiempo de subida: 28 nS
Cossⓘ - Capacitancia de salida: 280 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0079 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET IRFR7546PBF
IRFR7546PBF Datasheet (PDF)
irfr7546pbf irfu7546pbf.pdf
StrongIRFET IRFR7546PbF IRFU7546PbF HEXFET Power MOSFET Application Brushed motor drive applications DVDSS 60V BLDC motor drive applications Battery powered circuits RDS(on) typ. 6.6m Half-bridge and full-bridge topologies max 7.9mG Synchronous rectifier applications ID (Silicon Limited) 71A Resonant
irfr7546pbf irfu7546pbf.pdf
StrongIRFET IRFR7546PbF IRFU7546PbF HEXFET Power MOSFET Application Brushed motor drive applications DVDSS 60V BLDC motor drive applications Battery powered circuits RDS(on) typ. 6.6m Half-bridge and full-bridge topologies max 7.9mG Synchronous rectifier applications ID (Silicon Limited) 71A Resonant
irfr7546.pdf
isc N-Channel MOSFET Transistor IRFR7546, IIRFR7546FEATURESStatic drain-source on-resistance:RDS(on)7.9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
irfr7540pbf irfu7540pbf.pdf
StrongIRFET IRFR7540PbF IRFU7540PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications RDS(on) typ. 4.0mBattery powered circuits max 4.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 110A S Resonant
irfr7540pbf irfu7540pbf.pdf
StrongIRFET IRFR7540PbF IRFU7540PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications RDS(on) typ. 4.0mBattery powered circuits max 4.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 110A S Resonant
irfr7540.pdf
isc N-Channel MOSFET Transistor IRFR7540, IIRFR7540FEATURESStatic drain-source on-resistance:RDS(on)4.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918