Справочник MOSFET. IRFR7546PBF

 

IRFR7546PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFR7546PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 99 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.7 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 56 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 58 nC
   trⓘ - Время нарастания: 28 ns
   Cossⓘ - Выходная емкость: 280 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0079 Ohm
   Тип корпуса: TO252

 Аналог (замена) для IRFR7546PBF

 

 

IRFR7546PBF Datasheet (PDF)

 ..1. Size:576K  international rectifier
 irfr7546pbf irfu7546pbf.pdf

IRFR7546PBF IRFR7546PBF

StrongIRFET IRFR7546PbF IRFU7546PbF HEXFET Power MOSFET Application Brushed motor drive applications DVDSS 60V BLDC motor drive applications Battery powered circuits RDS(on) typ. 6.6m Half-bridge and full-bridge topologies max 7.9mG Synchronous rectifier applications ID (Silicon Limited) 71A Resonant

 ..2. Size:576K  infineon
 irfr7546pbf irfu7546pbf.pdf

IRFR7546PBF IRFR7546PBF

StrongIRFET IRFR7546PbF IRFU7546PbF HEXFET Power MOSFET Application Brushed motor drive applications DVDSS 60V BLDC motor drive applications Battery powered circuits RDS(on) typ. 6.6m Half-bridge and full-bridge topologies max 7.9mG Synchronous rectifier applications ID (Silicon Limited) 71A Resonant

 6.1. Size:242K  inchange semiconductor
 irfr7546.pdf

IRFR7546PBF IRFR7546PBF

isc N-Channel MOSFET Transistor IRFR7546, IIRFR7546FEATURESStatic drain-source on-resistance:RDS(on)7.9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

 7.1. Size:581K  international rectifier
 irfr7540pbf irfu7540pbf.pdf

IRFR7546PBF IRFR7546PBF

StrongIRFET IRFR7540PbF IRFU7540PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications RDS(on) typ. 4.0mBattery powered circuits max 4.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 110A S Resonant

 7.2. Size:581K  infineon
 irfr7540pbf irfu7540pbf.pdf

IRFR7546PBF IRFR7546PBF

StrongIRFET IRFR7540PbF IRFU7540PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications RDS(on) typ. 4.0mBattery powered circuits max 4.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 110A S Resonant

 7.3. Size:242K  inchange semiconductor
 irfr7540.pdf

IRFR7546PBF IRFR7546PBF

isc N-Channel MOSFET Transistor IRFR7540, IIRFR7540FEATURESStatic drain-source on-resistance:RDS(on)4.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 

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