IRFR825TRPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFR825TRPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 119 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 34 nC
   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 76 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.3 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET IRFR825TRPBF

IRFR825TRPBF Datasheet (PDF)

..1. Size:207K international rectifier
irfr825trpbf.pdf

PD - 96433AIRFR825TRPbFHEXFET Power MOSFETApplicationsTrr typ.VDSS RDS(on) typ. ID Zero Voltage Switching SMPS Uninterruptible Power Supplies500V 1.05 92ns 6.0A Motor Control applicationsDFeatures and Benefits Fast body diode eliminates the need for externalSdiodes in ZVS applications.G Lower Gate charge results in simpler drive requirements.

..2. Size:211K infineon
irfr825trpbf.pdf

5.1. Size:241K inchange semiconductor
irfr825tr.pdf

isc N-Channel MOSFET Transistor IRFR825TR,IIRFR825TRFEATURESStatic drain-source on-resistance:RDS(on)1.3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUninterruptible power suppliesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 5

9.1. Size:453K international rectifier
auirfr8401 auirfu8401.pdf

AUIRFR8401 AUTOMOTIVE GRADE AUIRFU8401 HEXFET Power MOSFET Features VDSS 40V D Advanced Process Technology New Ultra Low On-Resistance RDS(on) typ. 3.2m175C Operating Temperature 4.25mG max Fast Switching ID (Silicon Limited) 100A Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID

9.2. Size:279K international rectifier
auirfr8403 auirfu8403.pdf

AUIRFR8403AUIRFU8403AUTOMOTIVE GRADEFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDVDSS 40Vl New Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ. 2.4ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmax max. 3.1mGl Lead-Free, RoHS CompliantID (Silicon Limited) 127Al Automotive Qualified *DescriptionSID (Package L

9.3. Size:543K international rectifier
irfr8314pbf.pdf

IRFR8314PbF HEXFET Power MOSFET Application VDSS 30 V DOptimized for UPS/Inverter Applications RDS(on) max Low Voltage Power Tools 2.2(@ VGS = 10V) mG(@ VGS = 4.5V) 3.1 SQg (typical) 40 nC Benefits ID (Silicon Limited) 179 Fully Characterized Avalanche Voltage and Current A ID (Package Limited) 90A Lead-Free, RoHS Co

9.4. Size:219K international rectifier
irfr812trpbf.pdf

PD -97773IRFR812TRPbFHEXFET Power MOSFETApplications Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Uninterruptible Power Supplies500V 1.85 75ns 3.6A Motor Control applicationsDFeatures and Benefits Fast body diode eliminates the need for externalSdiodes in ZVS applications.G Lower Gate charge results in simpler drive requirements.

9.5. Size:292K international rectifier
auirfr8405 auirfu8405.pdf

AUIRFR8405AUTOMOTIVE GRADE AUIRFU8405Features HEXFET Power MOSFETl Advanced Process Technologyl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) typ. 1.65ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmax max. 1.98ml Lead-Free, RoHS Compliantl Automotive Qualified *ID (Silicon Limited) 211ADescriptionSpecifically designed for A

9.6. Size:679K infineon
auirfr8401 auirfu8401.pdf

AUIRFR8401 AUTOMOTIVE GRADE AUIRFU8401 Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V New Ultra Low On-Resistance 175C Operating Temperature RDS(on) typ. 3.2m Fast Switching max. 4.25m Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 100A Lead-Free, RoHS Compliant ID (Package Limited) 100A

9.7. Size:686K infineon
auirfr8403 auirfu8403.pdf

AUIRFR8403 AUTOMOTIVE GRADE AUIRFU8403 Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V New Ultra Low On-Resistance 175C Operating Temperature RDS(on) typ. 2.4m Fast Switching max. 3.1m Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 127A Lead-Free, RoHS Compliant ID (Package Limited) 100A

9.8. Size:543K infineon
irfr8314pbf.pdf

9.9. Size:223K infineon
irfr812trpbf.pdf

9.10. Size:688K infineon
auirfr8405 auirfu8405.pdf

AUIRFR8405 AUTOMOTIVE GRADE AUIRFU8405 Features VDSS 40V Advanced Process Technology RDS(on) typ. 1.65m New Ultra Low On-Resistance max. 1.98m 175C Operating Temperature ID (Silicon Limited) 211A Fast Switching ID (Package Limited) 100A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive

9.11. Size:242K inchange semiconductor
irfr8314.pdf

isc N-Channel MOSFET Transistor IRFR8314, IIRFR8314FEATURESStatic drain-source on-resistance:RDS(on)2.2mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOptimized for UPS/Inverter ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

9.12. Size:242K inchange semiconductor
irfr812.pdf

isc N-Channel MOSFET Transistor IRFR812, IIRFR812FEATURESStatic drain-source on-resistance:RDS(on)1.85Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUninterruptible power suppliesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500

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