IRFR825TRPBF - Даташиты. Аналоги. Основные параметры

PD - 96433AIRFR825TRPbFHEXFET Power MOSFETApplicationsTrr typ.VDSS RDS(on) typ. ID Zero Voltage Switching SMPS Uninterruptible Power Supplies500V 1.05 92ns 6.0A Motor Control applicationsDFeatures and Benefits Fast body diode eliminates the need for externalSdiodes in ZVS applications.G Lower Gate charge results in simpler drive requirements.

isc N-Channel MOSFET Transistor IRFR825TR,IIRFR825TRFEATURESStatic drain-source on-resistance:RDS(on)1.3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUninterruptible power suppliesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 5

AUIRFR8401 AUTOMOTIVE GRADE AUIRFU8401 HEXFET Power MOSFET Features VDSS 40V D Advanced Process Technology New Ultra Low On-Resistance RDS(on) typ. 3.2m175C Operating Temperature 4.25mG max Fast Switching ID (Silicon Limited) 100A Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID

AUIRFR8403AUIRFU8403AUTOMOTIVE GRADEFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDVDSS 40Vl New Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ. 2.4ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmax max. 3.1mGl Lead-Free, RoHS CompliantID (Silicon Limited) 127Al Automotive Qualified *DescriptionSID (Package L

IRFR8314PbF HEXFET Power MOSFET Application VDSS 30 V DOptimized for UPS/Inverter Applications RDS(on) max Low Voltage Power Tools 2.2(@ VGS = 10V) mG(@ VGS = 4.5V) 3.1 SQg (typical) 40 nC Benefits ID (Silicon Limited) 179 Fully Characterized Avalanche Voltage and Current A ID (Package Limited) 90A Lead-Free, RoHS Co

PD -97773IRFR812TRPbFHEXFET Power MOSFETApplications Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Uninterruptible Power Supplies500V 1.85 75ns 3.6A Motor Control applicationsDFeatures and Benefits Fast body diode eliminates the need for externalSdiodes in ZVS applications.G Lower Gate charge results in simpler drive requirements.

AUIRFR8405AUTOMOTIVE GRADE AUIRFU8405Features HEXFET Power MOSFETl Advanced Process Technologyl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) typ. 1.65ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmax max. 1.98ml Lead-Free, RoHS Compliantl Automotive Qualified *ID (Silicon Limited) 211ADescriptionSpecifically designed for A

AUIRFR8401 AUTOMOTIVE GRADE AUIRFU8401 Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V New Ultra Low On-Resistance 175C Operating Temperature RDS(on) typ. 3.2m Fast Switching max. 4.25m Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 100A Lead-Free, RoHS Compliant ID (Package Limited) 100A

AUIRFR8403 AUTOMOTIVE GRADE AUIRFU8403 Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V New Ultra Low On-Resistance 175C Operating Temperature RDS(on) typ. 2.4m Fast Switching max. 3.1m Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 127A Lead-Free, RoHS Compliant ID (Package Limited) 100A

AUIRFR8405 AUTOMOTIVE GRADE AUIRFU8405 Features VDSS 40V Advanced Process Technology RDS(on) typ. 1.65m New Ultra Low On-Resistance max. 1.98m 175C Operating Temperature ID (Silicon Limited) 211A Fast Switching ID (Package Limited) 100A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive

isc N-Channel MOSFET Transistor IRFR8314, IIRFR8314FEATURESStatic drain-source on-resistance:RDS(on)2.2mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOptimized for UPS/Inverter ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

isc N-Channel MOSFET Transistor IRFR812, IIRFR812FEATURESStatic drain-source on-resistance:RDS(on)1.85Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUninterruptible power suppliesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500