IRHQ597110 Todos los transistores

 

IRHQ597110 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRHQ597110
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 12 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 102 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.96 Ohm
   Paquete / Cubierta: LCC28
     - Selección de transistores por parámetros

 

IRHQ597110 Datasheet (PDF)

 ..1. Size:128K  international rectifier
 irhq597110.pdf pdf_icon

IRHQ597110

PD - 94210IRHQ597110100V, Quad P-CHANNEL RADIATION HARDENEDRAD-Hard HEXFET POWER MOSFETTECHNOLOGY SURFACE MOUNT (LCC-28) 4#4 Product Summary Part Number Radiation Level RDS(on) ID IRHQ597110 100K Rads (Si) 0.96 -2.8A IRHQ593110 300K Rads (Si) 0.98 -2.8A LCC-28International Rectifiers RAD-HardTM HEXFET MOSFETFeatures:Technology provides high p

 9.1. Size:128K  international rectifier
 irhq57110.pdf pdf_icon

IRHQ597110

PD - 94211 IRHQ57110100V, Quad N-CHANNEL RADIATION HARDENEDRAD-Hard HEXFET POWER MOSFETTECHNOLOGY SURFACE MOUNT (LCC-28) 4#4 Product Summary Part Number Radiation Level RDS(on) IDIRHQ57110 100K Rads (Si) 0.27 4.6AIRHQ53110 300K Rads (Si) 0.27 4.6AIRHQ54110 600K Rads (Si) 0.27 4.6AIRHQ58110 1000K Rads (Si) 0.29 4.6A LCC-28International Rectif

 9.2. Size:198K  international rectifier
 irhq567110.pdf pdf_icon

IRHQ597110

PD - 94057BIRHQ567110100V, Combination 2N-2P-CHANNEL RADIATION HARDENEDRAD-Hard HEXFET POWER MOSFETTECHNOLOGY SURFACE MOUNT (LCC-28) 4#4 Product Summary Part Number Radiation Level RDS(on) ID CHANNEL IRHQ567110 100K Rads (Si) 0.27 4.6A N IRHQ563110 300K Rads (Si) 0.29 4.6A N IRHQ567110 100K Rads (Si) 0.96 -2.8A P IRHQ563110 300K Rads (Si) 0.98 -

 9.3. Size:131K  international rectifier
 irhq57214se.pdf pdf_icon

IRHQ597110

PD - 93881BRADIATION HARDENED IRHQ57214SEPOWER MOSFET250V, QUAD N-CHANNELSURFACE MOUNT (LCC-28)TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHQ57214SE 100K Rads (Si) 1.5 1.9ALCC-28International Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli- Features:cations. These devices have been characterized

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FQB5N60TM | IRF7316QPBF | CS3R50FA9 | VBQA1405 | DAMH220N150 | HRP72N06K | STP53N06

 

 
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