IRLR7807ZCPBF Todos los transistores

 

IRLR7807ZCPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLR7807ZCPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 43 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 28 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0138 Ohm

Encapsulados: TO252

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IRLR7807ZCPBF datasheet

 ..1. Size:298K  international rectifier
 irlr7807zcpbf irlu7807zcpbf.pdf pdf_icon

IRLR7807ZCPBF

PD - 96055 IRLR7807ZCPbF IRLU7807ZCPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg (typ) Converters for Computer Processor Power l Lead-Free 30V 13.8m 7.0nC Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current D-Pak I-Pak IRLR7807ZCPbF IRLU7807ZCPbF Absolute Maximum Ra

 5.1. Size:268K  international rectifier
 irlr7807zpbf irlu7807zpbf.pdf pdf_icon

IRLR7807ZCPBF

PD - 95777A IRLR7807ZPbF IRLU7807ZPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg (typ.) Converters for Computer Processor Power l Lead-Free 30V 13.8m 7.0nC Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current D-Pak I-Pak IRLR7807Z IRLU7807Z Absolute Maximum Ratings

 5.2. Size:159K  international rectifier
 irlr7807z.pdf pdf_icon

IRLR7807ZCPBF

PD - 94662 IRLR7807Z IRLU7807Z Applications HEXFET Power MOSFET High Frequency Synchronous Buck VDSS RDS(on) max Converters for Computer Processor Power Qg (typ.) Benefits 30V 13.8m 7.0nC Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current D-Pak I-Pak IRLR7807Z IRLU7807Z Absolute Maximum Ratings Parameter Max. Units

 5.3. Size:242K  inchange semiconductor
 irlr7807z.pdf pdf_icon

IRLR7807ZCPBF

isc N-Channel MOSFET Transistor IRLR7807Z, IIRLR7807Z FEATURES Static drain-source on-resistance RDS(on) 13.8m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Synchronous Buck Converters For Computer Processor Power ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

MOSTRAR MÁS

Otros transistores... IRLR3802PBF , IRLR3915PBF , IRLR4343 , IRLR4343PBF , IRLU3802PBF , IRLU3915PBF , IRLU4343 , IRLU4343PBF , IRF1010E , IRLR7807ZPBF , IRLR7811WCPBF , IRLR7811WPBF , IRLR7821CPBF , IRLR7821PBF , IRLR7833PBF , IRLR7843CPBF , IRLR7843PBF .

History: 30P06 | NTD4904N | 2SK3857CT | IRF3205LPBF | LXP152ALT1G

 

 

 

 

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