IRFM110A Todos los transistores

 

IRFM110A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFM110A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 2 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 1.5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 8.5 nC
   Tiempo de subida (tr): 14 nS
   Conductancia de drenaje-sustrato (Cd): 55 pF
   Resistencia entre drenaje y fuente RDS(on): 0.4 Ohm
   Paquete / Cubierta: SOT223

 Búsqueda de reemplazo de MOSFET IRFM110A

 

IRFM110A Datasheet (PDF)

 ..1. Size:263K  fairchild semi
irfm110a.pdf

IRFM110A
IRFM110A

IRFM110AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.289 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbo

 ..2. Size:950K  samsung
irfm110a.pdf

IRFM110A
IRFM110A

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.289 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

 9.1. Size:309K  international rectifier
irfm150.pdf

IRFM110A
IRFM110A

 9.2. Size:211K  international rectifier
irfm140.pdf

IRFM110A
IRFM110A

 9.3. Size:267K  fairchild semi
irfm120atf.pdf

IRFM110A
IRFM110A

IRFM120AAdvanced Power MOSFETIEEE802.3af CompatibleFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.3 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.155 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum

 9.4. Size:269K  fairchild semi
irfm120a.pdf

IRFM110A
IRFM110A

IRFM120AAdvanced Power MOSFETIEEE802.3af CompatibleFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.3 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.155 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum

 9.5. Size:965K  samsung
irfm120a.pdf

IRFM110A
IRFM110A

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.155 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

 9.6. Size:414K  onsemi
irfm120a.pdf

IRFM110A
IRFM110A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.7. Size:23K  semelab
2n7224 irfm150.pdf

IRFM110A
IRFM110A

2N7224SEMEIRFM150LABMECHANICAL DATADimensions in mm (inches)NCHANNEL13.59 (0.535) 6.32 (0.249)POWER MOSFET13.84 (0.545) 6.60 (0.260)3.53 (0.139) 1.02 (0.040)Dia.3.78 (0.149) 1.27 (0.050)VDSS 100VID(cont) 34ARDS(on) 0.0701 2 3FEATURES REPETITIVE AVALANCHE RATING ISOLATED AND HERMETICALLY SEALED ALTERNATIVE TO TO-3 PACKAGE0.89 (0.035)1.14 (0

 9.8. Size:22K  semelab
irfm1310st.pdf

IRFM110A
IRFM110A

IRFM1310STMECHANICAL DATADimensions in mm (inches)NCHANNEL POWER MOSFET VDSS 100VID(cont) 34ARDS(on) 0.070 FEATURES REPETITIVE AVALANCHE RATING ISOLATED AND HERMETICALLY SEALED EASE OF PARALLELINGTO254Z Package SIMPLE DRIVE REQUIREMENTSPin 1 Drain Pin 2 Sou

 9.9. Size:813K  cn vbsemi
irfm120a.pdf

IRFM110A
IRFM110A

IRFM120Awww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs1000.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET ABS

Otros transistores... IRFL214 , IRFL4105 , IRFL4310 , IRFL9014 , IRFL9110 , IRFM014A , IRFM044 , IRFM054 , 20N50 , IRFM120A , IRFM140 , IRFM150 , IRFM210A , IRFM214A , IRFM220A , IRFM224A , IRFM240 .

 

 
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