IRFM110A MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFM110A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 1.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 8.5 nC
Rise Time (tr): 14 nS
Drain-Source Capacitance (Cd): 55 pF
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
Package: SOT223
IRFM110A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFM110A Datasheet (PDF)
irfm110a.pdf
IRFM110AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.289 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbo
irfm110a.pdf
Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.289 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va
irfm120atf.pdf
IRFM120AAdvanced Power MOSFETIEEE802.3af CompatibleFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.3 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.155 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum
irfm120a.pdf
IRFM120AAdvanced Power MOSFETIEEE802.3af CompatibleFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.3 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.155 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum
irfm120a.pdf
Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.155 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va
irfm120a.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
2n7224 irfm150.pdf
2N7224SEMEIRFM150LABMECHANICAL DATADimensions in mm (inches)NCHANNEL13.59 (0.535) 6.32 (0.249)POWER MOSFET13.84 (0.545) 6.60 (0.260)3.53 (0.139) 1.02 (0.040)Dia.3.78 (0.149) 1.27 (0.050)VDSS 100VID(cont) 34ARDS(on) 0.0701 2 3FEATURES REPETITIVE AVALANCHE RATING ISOLATED AND HERMETICALLY SEALED ALTERNATIVE TO TO-3 PACKAGE0.89 (0.035)1.14 (0
irfm1310st.pdf
IRFM1310STMECHANICAL DATADimensions in mm (inches)NCHANNEL POWER MOSFET VDSS 100VID(cont) 34ARDS(on) 0.070 FEATURES REPETITIVE AVALANCHE RATING ISOLATED AND HERMETICALLY SEALED EASE OF PARALLELINGTO254Z Package SIMPLE DRIVE REQUIREMENTSPin 1 Drain Pin 2 Sou
irfm120a.pdf
IRFM120Awww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs1000.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET ABS
Datasheet: IRFL214 , IRFL4105 , IRFL4310 , IRFL9014 , IRFL9110 , IRFM014A , IRFM044 , IRFM054 , 20N50 , IRFM120A , IRFM140 , IRFM150 , IRFM210A , IRFM214A , IRFM220A , IRFM224A , IRFM240 .
