IRLR8103 Todos los transistores

 

IRLR8103 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLR8103

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 89 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 89 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: TO252

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IRLR8103 datasheet

 ..1. Size:38K  international rectifier
irlr8103 irlr8503.pdf pdf_icon

IRLR8103

PD - 93838 PD - 93839 IRLR8103/IRLR8503 IRLR8103/IRLR8503 Provisional Data Sheet N-Channel Application-Specific MOSFETs HEXFET Chipset for DC-DC Converters Ideal for CPU Core DC-DC Converters Low Conduction Losses D Low Switching Losses Minimizes Parallel MOSFETs for high current applications Description G These new devices employ advanced HEXFET power MO

 0.1. Size:209K  international rectifier
irlr8103vpbf.pdf pdf_icon

IRLR8103

PD - 95093A IRLR8103VPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses D Minimizes Parallel MOSFETs for high current applications 100% RG Tested Lead-Free G Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance S D-Pak of

 0.2. Size:111K  international rectifier
irlr8103v.pdf pdf_icon

IRLR8103

PD-94021A IRLR8103V N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses D Low Switching Losses Minimizes Parallel MOSFETs for high current applications Description G This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced S D-

 0.3. Size:847K  cn vbsemi
irlr8103vtr.pdf pdf_icon

IRLR8103

IRLR8103VTR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET A

Otros transistores... IRLU8256PBF , IRLU8259PBF , IRLU8721PBF , IRLU8726PBF , IRLU8729PBF , IRLU8743PBF , IRLU9343-701 , IRLR8203PBF , IRF2807 , IRLR8103VPBF , IRLR8113PBF , IRLR8256PBF , IRLR8259PBF , IRLR8503 , IRLR8503PBF , IRLR8715CPBF , IRLR8721PBF .

 

 

 


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