All MOSFET. IRLR8103 Datasheet

 

IRLR8103 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLR8103
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 89 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
   Maximum Drain Current |Id|: 89 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 45 nC
   Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm
   Package: TO252

 IRLR8103 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLR8103 Datasheet (PDF)

 ..1. Size:38K  international rectifier
 irlr8103 irlr8503.pdf

IRLR8103 IRLR8103

PD - 93838PD - 93839IRLR8103/IRLR8503IRLR8103/IRLR8503Provisional Data Sheet N-Channel Application-Specific MOSFETsHEXFET Chipset for DC-DC Converters Ideal for CPU Core DC-DC Converters Low Conduction LossesD Low Switching Losses Minimizes Parallel MOSFETs for high currentapplicationsDescriptionGThese new devices employ advanced HEXFET powerMO

 0.1. Size:209K  international rectifier
 irlr8103vpbf.pdf

IRLR8103 IRLR8103

PD - 95093AIRLR8103VPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching LossesD Minimizes Parallel MOSFETs for high currentapplications 100% RG Tested Lead-FreeGDescriptionThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedented balanceS D-Pakof

 0.2. Size:111K  international rectifier
 irlr8103v.pdf

IRLR8103 IRLR8103

PD-94021AIRLR8103V N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesD Low Switching Losses Minimizes Parallel MOSFETs for high currentapplicationsDescriptionGThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedentedbalance of on-resistance and gate charge. The reducedS D-

 0.3. Size:209K  infineon
 irlr8103vpbf.pdf

IRLR8103 IRLR8103

PD - 95093AIRLR8103VPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching LossesD Minimizes Parallel MOSFETs for high currentapplications 100% RG Tested Lead-FreeGDescriptionThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedented balanceS D-Pakof

 0.4. Size:847K  cn vbsemi
 irlr8103vtr.pdf

IRLR8103 IRLR8103

IRLR8103VTRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETA

 0.5. Size:262K  inchange semiconductor
 irlr8103v.pdf

IRLR8103 IRLR8103

Isc N-Channel MOSFET Transistor IRLR8103VFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , IRFP250 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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