IRLR8113PBF Todos los transistores

 ..1. Size:262K  international rectifier
 irlu8113pbf irlr8113pbf.pdf

PD - 95779A IRLR8113PbF IRLU8113PbF HEXFET Power MOSFET Applications l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power 30V 6.0m 22nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS D-Pak I-Pak l Ultra-Low Gate Impedance IR

 6.1. Size:200K  international rectifier
 irlr8113.pdf

PD - 94621 IRLR8113 IRLU8113 HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Synchronous Buck Converters for Computer Processor Power 30V 6.0m 22nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak l Fully Characterized

 8.1. Size:38K  international rectifier
 irlr8103 irlr8503.pdf

PD - 93838 PD - 93839 IRLR8103/IRLR8503 IRLR8103/IRLR8503 Provisional Data Sheet N-Channel Application-Specific MOSFETs HEXFET Chipset for DC-DC Converters Ideal for CPU Core DC-DC Converters Low Conduction Losses D Low Switching Losses Minimizes Parallel MOSFETs for high current applications Description G These new devices employ advanced HEXFET power MO

 8.2. Size:209K  international rectifier
 irlr8103vpbf.pdf

PD - 95093A IRLR8103VPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses D Minimizes Parallel MOSFETs for high current applications 100% RG Tested Lead-Free G Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance S D-Pak of

 8.3. Size:111K  international rectifier
 irlr8103v.pdf

PD-94021A IRLR8103V N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses D Low Switching Losses Minimizes Parallel MOSFETs for high current applications Description G This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced S D-

 8.4. Size:847K  cn vbsemi
 irlr8103vtr.pdf

IRLR8103VTR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET A

 8.5. Size:262K  inchange semiconductor
 irlr8103v.pdf

Isc N-Channel MOSFET Transistor IRLR8103V FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt