IRLU2905ZPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLU2905ZPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 110 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 42 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 23 nC
trⓘ - Tiempo de subida: 130 nS
Cossⓘ - Capacitancia de salida: 230 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm
Paquete / Cubierta: TO251
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IRLU2905ZPBF Datasheet (PDF)
irlu2905zpbf irlr2905zpbf.pdf
PD - 95774BIRLR2905ZPbFIRLU2905ZPbFFeatures HEXFET Power MOSFET Logic LevelD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 13.5m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extrem
irlr2905zpbf irlu2905zpbf.pdf
PD - 95774BIRLR2905ZPbFIRLU2905ZPbFFeatures HEXFET Power MOSFET Logic LevelD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 13.5m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extrem
irlu2905z.pdf
isc N-Channel MOSFET Transistor IRLU2905ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
irlr2905pbf irlu2905pbf.pdf
PD- 95084AIRLR/U2905PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-ResistanceDl Surface Mount (IRLR2905)VDSS = 55Vl Straight Lead (IRLU2905)l Advanced Process TechnologyRDS(on) = 0.027l Fast SwitchingGl Fully Avalanche RatedID = 42Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing t
irlr2905 irlu2905.pdf
PD- 95084AIRLR/U2905PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-ResistanceDl Surface Mount (IRLR2905)VDSS = 55Vl Straight Lead (IRLU2905)l Advanced Process TechnologyRDS(on) = 0.027l Fast SwitchingGl Fully Avalanche RatedID = 42Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing t
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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Recientemente añadidas las descripciónes de los transistores:
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