IRLU2905ZPBF MOSFET Datasheet: N-Ch, 55V, 42A. Full specification with pinout and replacement list

IRLU2905ZPBF Specs and Replacement

Type Designator: IRLU2905ZPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm

Package: TO251

IRLU2905ZPBF substitution

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IRLU2905ZPBF datasheet

..1. Size:328K international rectifier
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PD - 95774B IRLR2905ZPbF IRLU2905ZPbF Features HEXFET Power MOSFET Logic Level D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 13.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extrem... See More ⇒

..2. Size:340K international rectifier
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5.1. Size:255K inchange semiconductor
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isc N-Channel MOSFET Transistor IRLU2905Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒

6.1. Size:314K international rectifier
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PD- 95084A IRLR/U2905PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR2905) VDSS = 55V l Straight Lead (IRLU2905) l Advanced Process Technology RDS(on) = 0.027 l Fast Switching G l Fully Avalanche Rated ID = 42A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing t... See More ⇒