IRLU3103PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLU3103PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 107 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 16 V
Corriente continua de drenaje |Id|: 55 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 50 nC
Tiempo de subida (tr): 210 nS
Conductancia de drenaje-sustrato (Cd): 640 pF
Resistencia entre drenaje y fuente RDS(on): 0.019 Ohm
Paquete / Cubierta: TO251
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IRLU3103PBF Datasheet (PDF)
irlu3103pbf irlr3103pbf.pdf
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PD - 95085AIRLR/U3103PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-ResistanceDl Surface Mount (IRLR3103)VDSS = 30Vl Straight Lead (IRLU3103)l Advanced Process TechnologyRDS(on) = 0.019l Fast SwitchingGl Fully Avalanche RatedID = 55Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing
irlr3103pbf irlu3103pbf.pdf
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PD - 95085AIRLR/U3103PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-ResistanceDl Surface Mount (IRLR3103)VDSS = 30Vl Straight Lead (IRLU3103)l Advanced Process TechnologyRDS(on) = 0.019l Fast SwitchingGl Fully Avalanche RatedID = 55Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing
irlu3103p.pdf
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IRLU3103Pwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg (Typ.)ID (A) TrenchFET Gen III Power MOSFET0.07 at VGS = 10 V 53 100 % Rg TestedRoHS30 19 nCCOMPLIANT 100 % UIS Tested0.09 at VGS = 4.5 V 48APPLICATIONSTO-251 DC/DC ConversionD- System PowerGSN-Channel MOSFET G D STo
irlu3103.pdf
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isc N-Channel MOSFET Transistor IRLU3103FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
irlr3105pbf irlu3105pbf.pdf
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PD - 95553BIRLR3105PbFIRLU3105PbFHEXFET Power MOSFETFeatures Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating Temperature Fast Switching RDS(on) = 0.037G Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 25ASDescriptionThis HEXFET Power MOSFET utilizes the latest processingtechniques to achie
irlr3105pbf irlu3105pbf.pdf
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PD - 95553BIRLR3105PbFIRLU3105PbFHEXFET Power MOSFETFeatures Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating Temperature Fast Switching RDS(on) = 0.037G Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 25ASDescriptionThis HEXFET Power MOSFET utilizes the latest processingtechniques to achie
irlu3105.pdf
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isc N-Channel MOSFET Transistor IRLU3105FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![IRLU3103PBF](https://alltransistors.com/images/us.png)
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