IRLU3103PBF MOSFET Datasheet: N-Ch, 30V, 55A. Full specification with pinout and replacement list

IRLU3103PBF Specs and Replacement

Type Designator: IRLU3103PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 210 nS

Cossⓘ - Output Capacitance: 640 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: TO251

IRLU3103PBF substitution

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IRLU3103PBF datasheet

..1. Size:286K international rectifier
irlu3103pbf irlr3103pbf.pdf pdf_icon

PD - 95085A IRLR/U3103PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR3103) VDSS = 30V l Straight Lead (IRLU3103) l Advanced Process Technology RDS(on) = 0.019 l Fast Switching G l Fully Avalanche Rated ID = 55A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing ... See More ⇒

..2. Size:286K international rectifier
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5.1. Size:2237K cn vbsemi
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IRLU3103P www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) TrenchFET Gen III Power MOSFET 0.07 at VGS = 10 V 53 100 % Rg Tested RoHS 30 19 nC COMPLIANT 100 % UIS Tested 0.09 at VGS = 4.5 V 48 APPLICATIONS TO-251 DC/DC Conversion D - System Power G S N-Channel MOSFET G D S To... See More ⇒

6.1. Size:261K inchange semiconductor
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isc N-Channel MOSFET Transistor IRLU3103 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒