IRLR2705PBF Todos los transistores

 

IRLR2705PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLR2705PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 68 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 28 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TO252
 

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IRLR2705PBF Datasheet (PDF)

 ..1. Size:260K  international rectifier
 irlr2705pbf irlu2705pbf.pdf pdf_icon

IRLR2705PBF

PD - 95062AIRLR2705PbFIRLU2705PbFl Logic-Level Gate DriveHEXFET Power MOSFETl Ultra Low On-ResistanceDl Surface Mount (IRLR2705)VDSS = 55Vl Straight Lead (IRLU2705)l Advanced Process Technologyl Fast Switching RDS(on) = 0.040Gl Fully Avalanche Ratedl Lead-FreeID = 28ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedp

 ..2. Size:260K  international rectifier
 irlu2705pbf irlr2705pbf.pdf pdf_icon

IRLR2705PBF

PD - 95062AIRLR2705PbFIRLU2705PbFl Logic-Level Gate DriveHEXFET Power MOSFETl Ultra Low On-ResistanceDl Surface Mount (IRLR2705)VDSS = 55Vl Straight Lead (IRLU2705)l Advanced Process Technologyl Fast Switching RDS(on) = 0.040Gl Fully Avalanche Ratedl Lead-FreeID = 28ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedp

 6.1. Size:162K  international rectifier
 irlr2705.pdf pdf_icon

IRLR2705PBF

PD- 9.1317BIRLR/U2705PRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Ultra Low On-Resistance VDSS = 55V Surface Mount (IRLR2705) Straight Lead (IRLU2705)RDS(on) = 0.040G Advanced Process Technology Fast SwitchingID = 28A S Fully Avalanche RatedDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to

 6.2. Size:769K  cn vbsemi
 irlr2705trpbf.pdf pdf_icon

IRLR2705PBF

IRLR2705TRPBFwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

MOSTRAR MÁS

Otros transistores... IRLU2905ZPBF , IRLU3103PBF , IRLU3110ZPBF , IRLU3114ZPBF , IRLU3303PBF , IRLU3410PBF , IRLU3636PBF , IRLR2703PBF , 5N50 , IRLR2905PBF , IRLR2905ZPBF , IRLR2908PBF , IRLR3103PBF , IRLR3105PBF , IRLR3110ZPBF , IRLR3114ZPBF , IRLR3303PBF .

 

 
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