IRLR2705PBF Todos los transistores

 

IRLR2705PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLR2705PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 68 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 28 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: TO252

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IRLR2705PBF datasheet

 ..1. Size:260K  international rectifier
 irlr2705pbf irlu2705pbf.pdf pdf_icon

IRLR2705PBF

PD - 95062A IRLR2705PbF IRLU2705PbF l Logic-Level Gate Drive HEXFET Power MOSFET l Ultra Low On-Resistance D l Surface Mount (IRLR2705) VDSS = 55V l Straight Lead (IRLU2705) l Advanced Process Technology l Fast Switching RDS(on) = 0.040 G l Fully Avalanche Rated l Lead-Free ID = 28A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced p

 ..2. Size:260K  international rectifier
 irlu2705pbf irlr2705pbf.pdf pdf_icon

IRLR2705PBF

PD - 95062A IRLR2705PbF IRLU2705PbF l Logic-Level Gate Drive HEXFET Power MOSFET l Ultra Low On-Resistance D l Surface Mount (IRLR2705) VDSS = 55V l Straight Lead (IRLU2705) l Advanced Process Technology l Fast Switching RDS(on) = 0.040 G l Fully Avalanche Rated l Lead-Free ID = 28A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced p

 6.1. Size:162K  international rectifier
 irlr2705.pdf pdf_icon

IRLR2705PBF

PD- 9.1317B IRLR/U2705 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Ultra Low On-Resistance VDSS = 55V Surface Mount (IRLR2705) Straight Lead (IRLU2705) RDS(on) = 0.040 G Advanced Process Technology Fast Switching ID = 28A S Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to

 6.2. Size:769K  cn vbsemi
 irlr2705trpbf.pdf pdf_icon

IRLR2705PBF

IRLR2705TRPBF www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

MOSTRAR MÁS

Otros transistores... IRLU2905ZPBF , IRLU3103PBF , IRLU3110ZPBF , IRLU3114ZPBF , IRLU3303PBF , IRLU3410PBF , IRLU3636PBF , IRLR2703PBF , IRFP064N , IRLR2905PBF , IRLR2905ZPBF , IRLR2908PBF , IRLR3103PBF , IRLR3105PBF , IRLR3110ZPBF , IRLR3114ZPBF , IRLR3303PBF .

History: NDT6N60 | AOD2904 | FHU5N60A | FX20VSJ-3 | AGM612MNA | AUIRF7343Q | NTD4904N

 

 

 

 

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