IRLR2908PBF Todos los transistores

 

IRLR2908PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLR2908PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 120 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 95 nS

Cossⓘ - Capacitancia de salida: 260 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: TO252

 Búsqueda de reemplazo de IRLR2908PBF MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRLR2908PBF datasheet

 ..1. Size:335K  international rectifier
 irlr2908pbf irlu2908pbf.pdf pdf_icon

IRLR2908PBF

PD - 95552B IRLR2908PbF IRLU2908PbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 80V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 28m Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 30A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve

 6.1. Size:230K  international rectifier
 auirlr2908.pdf pdf_icon

IRLR2908PBF

PD - 97734 AUTOMOTIVE GRADE AUIRLR2908 Features HEXFET Power MOSFET l Advanced Planar Technology D V(BR)DSS l Logic-Level Gate Drive 80V l Low On-Resistance RDS(on) typ. 22.5m l 175 C Operating Temperature max 28m l Fast Switching G l Fully Avalanche Rated ID (Silicon Limited) 39A l Repetitive Avalanche Allowed S ID (Package Limited) 30A up to Tjmax l Lead-Free,

 6.2. Size:206K  international rectifier
 irlr2908.pdf pdf_icon

IRLR2908PBF

PD - 94501 IRLR2908 AUTOMOTIVE MOSFET IRLU2908 HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 80V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 28m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 30A S Description Specifically designed for Automotive applications, this HEXFET Power MOSF

 6.3. Size:823K  cn vbsemi
 irlr2908tr.pdf pdf_icon

IRLR2908PBF

IRLR2908TR www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unl

MOSTRAR MÁS

Otros transistores... IRLU3114ZPBF , IRLU3303PBF , IRLU3410PBF , IRLU3636PBF , IRLR2703PBF , IRLR2705PBF , IRLR2905PBF , IRLR2905ZPBF , IRFZ44N , IRLR3103PBF , IRLR3105PBF , IRLR3110ZPBF , IRLR3114ZPBF , IRLR3303PBF , IRLR3410PBF , IRLR3636PBF , IRLR6225PBF .

History: BSR302N | AFN4172WSS8

 

 

 

 

↑ Back to Top
.