IRLR3110ZPBF Todos los transistores

 

IRLR3110ZPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLR3110ZPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 42 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 110 nS
   Cossⓘ - Capacitancia de salida: 310 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: TO252
 

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IRLR3110ZPBF Datasheet (PDF)

 ..1. Size:317K  international rectifier
 irlr3110zpbf irlu3110zpbf.pdf pdf_icon

IRLR3110ZPBF

PD - 97175BIRLR3110ZPbFIRLU3110ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 100V Repetitive Avalanche Allowed up to TjmaxGRDS(on) = 14mDescriptionSpecifically designed for Industrial applications,this HEXFET Power MOSFET utilizes the latest Sprocessing techniques to

 ..2. Size:317K  international rectifier
 irlu3110zpbf irlr3110zpbf.pdf pdf_icon

IRLR3110ZPBF

PD - 97175BIRLR3110ZPbFIRLU3110ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 100V Repetitive Avalanche Allowed up to TjmaxGRDS(on) = 14mDescriptionSpecifically designed for Industrial applications,this HEXFET Power MOSFET utilizes the latest Sprocessing techniques to

 ..3. Size:893K  cn vbsemi
 irlr3110zpbf.pdf pdf_icon

IRLR3110ZPBF

IRLR3110ZPBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 100 % Rg Tested0.0075 at VGS = 10 V85100 100 % UIS Tested0.0095 at VGS = 4.5 V75APPLICATIONS Primary Side Switch Isolated DC/DC ConverterTO-252 D G G D S S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25

 5.1. Size:714K  infineon
 auirlr3110z auirlu3110z.pdf pdf_icon

IRLR3110ZPBF

AUIRLR3110Z AUTOMOTIVE GRADE AUIRLU3110Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Logic Level Gate Drive max. 14m 175C Operating Temperature ID (Silicon Limited) 63A Fast Switching ID (Package Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lea

MOSTRAR MÁS

Otros transistores... IRLU3636PBF , IRLR2703PBF , IRLR2705PBF , IRLR2905PBF , IRLR2905ZPBF , IRLR2908PBF , IRLR3103PBF , IRLR3105PBF , IRF840 , IRLR3114ZPBF , IRLR3303PBF , IRLR3410PBF , IRLR3636PBF , IRLR6225PBF , IRLU2905PBF , IRLU3105PBF , IRLU2908PBF .

History: SMG2301 | G12P03D3 | IPP032N06N3G

 

 
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