IRLR3110ZPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRLR3110ZPBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 140 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 16 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 42 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 34 nC
Время нарастания (tr): 110 ns
Выходная емкость (Cd): 310 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.014 Ohm
Тип корпуса: TO252
Аналог (замена) для IRLR3110ZPBF
IRLR3110ZPBF Datasheet (PDF)
irlu3110zpbf irlr3110zpbf.pdf
PD - 97175BIRLR3110ZPbFIRLU3110ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 100V Repetitive Avalanche Allowed up to TjmaxGRDS(on) = 14mDescriptionSpecifically designed for Industrial applications,this HEXFET Power MOSFET utilizes the latest Sprocessing techniques to
irlr3110zpbf irlu3110zpbf.pdf
PD - 97175BIRLR3110ZPbFIRLU3110ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 100V Repetitive Avalanche Allowed up to TjmaxGRDS(on) = 14mDescriptionSpecifically designed for Industrial applications,this HEXFET Power MOSFET utilizes the latest Sprocessing techniques to
irlr3110zpbf.pdf
IRLR3110ZPBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 100 % Rg Tested0.0075 at VGS = 10 V85100 100 % UIS Tested0.0095 at VGS = 4.5 V75APPLICATIONS Primary Side Switch Isolated DC/DC ConverterTO-252 D G G D S S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25
auirlr3110z auirlu3110z.pdf
AUIRLR3110Z AUTOMOTIVE GRADE AUIRLU3110Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Logic Level Gate Drive max. 14m 175C Operating Temperature ID (Silicon Limited) 63A Fast Switching ID (Package Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lea
irlr3110z.pdf
isc N-Channel MOSFET Transistor IRLR3110Z, IIRLR3110ZFEATURESStatic drain-source on-resistance:RDS(on)14mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Ga
irlu3114zpbf irlr3114zpbf.pdf
PD - 97284AIRLR3114ZPbFIRLU3114ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic LevelGRDS(on) = 4.9mDescriptionThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremely lowon-resistance
irlr3114zpbf irlu3114zpbf.pdf
PD - 97284AIRLR3114ZPbFIRLU3114ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic LevelGRDS(on) = 4.9mDescriptionThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremely lowon-resistance
auirlr3114z auirlu3114z.pdf
AUIRLR3114Z AUTOMOTIVE GRADE AUIRLU3114Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance Logic Level Gate Drive RDS(on) typ. 4.9m 175C Operating Temperature max. 6.5m Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A L
irlr3114z.pdf
isc N-Channel MOSFET Transistor IRLR3114Z,IIRLR3114ZFEATURESStatic drain-source on-resistance:RDS(on)4.9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 40 VDSSV Gat
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