IRLU014PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLU014PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 7.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   trⓘ - Tiempo de subida: 110 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: TO251

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IRLU014PBF Datasheet (PDF)

..1. Size:1143K international rectifier
irlr014pbf irlu014pbf.pdf

PD - 95360AIRLR014PbFIRLU014PbF Lead-Free1/10/05Document Number: 91321 www.vishay.com1IRLR/U014PbFDocument Number: 91321 www.vishay.com2IRLR/U014PbFDocument Number: 91321 www.vishay.com3IRLR/U014PbFDocument Number: 91321 www.vishay.com4IRLR/U014PbFDocument Number: 91321 www.vishay.com5IRLR/U014PbFDocument Number: 91321 www.vishay.com6IRLR/U01

..2. Size:206K inchange semiconductor
irlu014pbf.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRLU014PBFFEATURESLow power lossHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VD

7.1. Size:286K 1
irlu014 irlr014.pdf

7.2. Size:342K 1
irlu014a irlr014a.pdf

7.3. Size:287K international rectifier
irlr014npbf irlu014npbf.pdf

PD - 95551BIRLR014NPbFIRLU014NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Surface Mount (IRLR024N)Dl Straight Lead (IRLU024N)VDSS = 55Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.14l Fully Avalanche RatedGl Lead-FreeID = 10ASDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achiev

7.4. Size:116K international rectifier
irlr014n irlu014n.pdf

PD- 94350IRLR/U014NHEXFET Power MOSFET Logic-Level Gate DriveD Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process TechnologyRDS(on) = 0.14G Fast Switching Fully Avalanche RatedID = 10ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the lowest possible on-resistance

7.5. Size:2163K vishay
irlr014 irlu014 sihlr014 sihlu014.pdf

IRLR014, IRLU014, SiHLR014, SiHLU014Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Surface Mount (IRLR014/SiHLR014)RDS(on) ()VGS = 5.0 V 0.20RoHS* Straight Lead (IRLU014/SiHLU014)Qg (Max.) (nC) 8.4COMPLIANTQgs (nC) 3.5 Available in Tape and ReelQgd (nC) 6.0 Logic-Level Gate DriveConfiguration Singl

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