IRLU120 Todos los transistores

 ..1. Size:1838K  international rectifier
 irlr120pbf irlu120pbf.pdf

PD- 95382A IRLR120PbF IRLU120PbF Lead-Free 12/07/04 Document Number 91324 www.vishay.com 1 IRLR/U120PbF Document Number 91324 www.vishay.com 2 IRLR/U120PbF Document Number 91324 www.vishay.com 3 IRLR/U120PbF Document Number 91324 www.vishay.com 4 IRLR/U120PbF Document Number 91324 www.vishay.com 5 IRLR/U120PbF Document Number 91324 www.vishay.com 6 IRLR/U12

 ..2. Size:2396K  vishay
 irlr120 irlu120 sihlr120 sihlu120.pdf

IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition RDS(on) ( )VGS = 5.0 V 0.27 Dynamic dV/dt Rating Qg (Max.) (nC) 12 Repetitive Avalanche Rated Surface Mount (IRLR120, SiHLR120) Qgs (nC) 3.0 Straight Lead (IRLU120, SiHLU120) Qgd (nC) 7.1 Available in

 0.1. Size:173K  1
 irlu120n.pdf

PD - 91541B IRLR/U120N HEXFET Power MOSFET Surface Mount (IRLR120N) D Straight Lead (IRLU120N) VDSS = 100V Advanced Process Technology Fast Switching RDS(on) = 0.185 Fully Avalanche Rated G Description ID = 10A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. Th

 0.2. Size:270K  international rectifier
 irlr120npbf irlu120npbf.pdf

IRLR120NPbF IRLU120NPbF HEXFET Power MOSFET l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) D l Advanced Process Technology VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.185 l Lead-Free G Description Fifth Generation HEXFETs from International Rectifier utilize ID = 10A S advanced processing techniques to achieve the lowest possible on-resistance pe

 0.3. Size:224K  fairchild semi
 irlr120a irlu120a.pdf

IRLR/U120A FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.22 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.176 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings

 0.4. Size:221K  inchange semiconductor
 irlu120n.pdf

isc N-Channel MOSFET Transistor IRLU120N FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN