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IRLU120 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLU120
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 7.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 12 nC
   trⓘ - Tiempo de subida: 64 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm
   Paquete / Cubierta: TO251
 

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IRLU120 Datasheet (PDF)

 ..1. Size:1838K  international rectifier
 irlr120pbf irlu120pbf.pdf pdf_icon

IRLU120

PD- 95382AIRLR120PbFIRLU120PbF Lead-Free12/07/04Document Number: 91324 www.vishay.com1IRLR/U120PbFDocument Number: 91324 www.vishay.com2IRLR/U120PbFDocument Number: 91324 www.vishay.com3IRLR/U120PbFDocument Number: 91324 www.vishay.com4IRLR/U120PbFDocument Number: 91324 www.vishay.com5IRLR/U120PbFDocument Number: 91324 www.vishay.com6IRLR/U12

 ..2. Size:2396K  vishay
 irlr120 irlu120 sihlr120 sihlu120.pdf pdf_icon

IRLU120

IRLR120, IRLU120, SiHLR120, SiHLU120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100DefinitionRDS(on) ()VGS = 5.0 V 0.27 Dynamic dV/dt RatingQg (Max.) (nC) 12 Repetitive Avalanche Rated Surface Mount (IRLR120, SiHLR120)Qgs (nC) 3.0 Straight Lead (IRLU120, SiHLU120)Qgd (nC) 7.1 Available in

 0.1. Size:173K  1
 irlu120n.pdf pdf_icon

IRLU120

PD - 91541BIRLR/U120NHEXFET Power MOSFET Surface Mount (IRLR120N)D Straight Lead (IRLU120N)VDSS = 100V Advanced Process Technology Fast SwitchingRDS(on) = 0.185 Fully Avalanche RatedGDescription ID = 10ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. Th

 0.2. Size:270K  international rectifier
 irlr120npbf irlu120npbf.pdf pdf_icon

IRLU120

IRLR120NPbFIRLU120NPbFHEXFET Power MOSFETl Surface Mount (IRLR120N)l Straight Lead (IRLU120N)Dl Advanced Process TechnologyVDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.185l Lead-FreeGDescriptionFifth Generation HEXFETs from International Rectifier utilize ID = 10ASadvanced processing techniques to achieve the lowest possibleon-resistance pe

MOSTRAR MÁS

Otros transistores... IRLU014N , IRLU014NPBF , IRLU014PBF , IRLU024NPBF , IRLU024PBF , IRLU024ZPBF , IRLU110 , IRLU110PBF , IRFB4110 , IRLU120NPBF , IRLU120PBF , IRLR014N , IRLR014NPBF , IRLR014PBF , IRLR024NPBF , IRLR024PBF , IRLR024ZPBF .

History: TMD3N50Z | NTS4172NT1G | SSFD3004 | IRFR214PBF | IRF7309QPBF | IPLU300N04S4-R8 | SI6473DQ

 

 
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