Справочник MOSFET. IRLU120

 

IRLU120 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRLU120
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 42 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 12 nC
   trⓘ - Время нарастания: 64 ns
   Cossⓘ - Выходная емкость: 150 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.27 Ohm
   Тип корпуса: TO251

 Аналог (замена) для IRLU120

 

 

IRLU120 Datasheet (PDF)

 ..1. Size:1838K  international rectifier
 irlr120pbf irlu120pbf.pdf

IRLU120 IRLU120

PD- 95382AIRLR120PbFIRLU120PbF Lead-Free12/07/04Document Number: 91324 www.vishay.com1IRLR/U120PbFDocument Number: 91324 www.vishay.com2IRLR/U120PbFDocument Number: 91324 www.vishay.com3IRLR/U120PbFDocument Number: 91324 www.vishay.com4IRLR/U120PbFDocument Number: 91324 www.vishay.com5IRLR/U120PbFDocument Number: 91324 www.vishay.com6IRLR/U12

 ..2. Size:2396K  vishay
 irlr120 irlu120 sihlr120 sihlu120.pdf

IRLU120 IRLU120

IRLR120, IRLU120, SiHLR120, SiHLU120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100DefinitionRDS(on) ()VGS = 5.0 V 0.27 Dynamic dV/dt RatingQg (Max.) (nC) 12 Repetitive Avalanche Rated Surface Mount (IRLR120, SiHLR120)Qgs (nC) 3.0 Straight Lead (IRLU120, SiHLU120)Qgd (nC) 7.1 Available in

 0.1. Size:173K  1
 irlu120n.pdf

IRLU120 IRLU120

PD - 91541BIRLR/U120NHEXFET Power MOSFET Surface Mount (IRLR120N)D Straight Lead (IRLU120N)VDSS = 100V Advanced Process Technology Fast SwitchingRDS(on) = 0.185 Fully Avalanche RatedGDescription ID = 10ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. Th

 0.2. Size:294K  international rectifier
 irlr120npbf irlu120npbf.pdf

IRLU120 IRLU120

PD - 95082AIRLR/U120NPbFHEXFET Power MOSFETl Surface Mount (IRLR120N)l Straight Lead (IRLU120N)Dl Advanced Process TechnologyVDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.185l Lead-FreeGDescription ID = 10ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance

 0.3. Size:224K  fairchild semi
 irlr120a irlu120a.pdf

IRLU120 IRLU120

IRLR/U120AFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.22 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.4 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current: 10A (Max.) @ VDS = 100V Lower RDS(ON): 0.176 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum Ratings

 0.4. Size:270K  infineon
 irlr120npbf irlu120npbf.pdf

IRLU120 IRLU120

IRLR120NPbFIRLU120NPbFHEXFET Power MOSFETl Surface Mount (IRLR120N)l Straight Lead (IRLU120N)Dl Advanced Process TechnologyVDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.185l Lead-FreeGDescriptionFifth Generation HEXFETs from International Rectifier utilize ID = 10ASadvanced processing techniques to achieve the lowest possibleon-resistance pe

 0.5. Size:221K  inchange semiconductor
 irlu120n.pdf

IRLU120 IRLU120

isc N-Channel MOSFET Transistor IRLU120NFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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