IRLML6302GPBF Todos los transistores

 

IRLML6302GPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLML6302GPBF
   Código: C*
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.78 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   Qgⓘ - Carga de la puerta: 2.4 nC
   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 53 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: SOT23 SOT346

 Búsqueda de reemplazo de MOSFET IRLML6302GPBF

 

IRLML6302GPBF Datasheet (PDF)

 ..1. Size:243K  international rectifier
irlml6302gpbf.pdf

IRLML6302GPBF
IRLML6302GPBF

PD - 96159IRLML6302GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel P-Channel MOSFETVDSS = -20Vl SOT-23 Footprintl Low Profile (

 5.1. Size:240K  international rectifier
irlml6302pbf.pdf

IRLML6302GPBF
IRLML6302GPBF

IRLML6302PbFl Generation V Technology HEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETG 1l SOT-23 FootprintVDSS = -20Vl Low Profile (

 5.2. Size:100K  international rectifier
irlml6302.pdf

IRLML6302GPBF
IRLML6302GPBF

PD - 9.1259DIRLML6302HEXFET Power MOSFET Generation V TechnologyD Ultra Low On-Resistance P-Channel MOSFET VDSS = -20V SOT-23 Footprint Low Profile (

 5.3. Size:236K  international rectifier
irlml6302pbf-1.pdf

IRLML6302GPBF
IRLML6302GPBF

IRLML6302PbF-1HEXFET Power MOSFETVDS -20 VRDS(on) max 0.60 G 1(@V = -4.5V)GSQg (typical) 2.4 nC3 DID -0.78 A(@T = 25C)AS 2Micro3TMFeatures BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, In

 5.4. Size:300K  infineon
irlml6302pbf.pdf

IRLML6302GPBF
IRLML6302GPBF

PD - 94947BIRLML6302PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel P-Channel MOSFETVDSS = -20Vl SOT-23 Footprintl Low Profile (

 5.5. Size:146K  tysemi
irlml6302.pdf

IRLML6302GPBF
IRLML6302GPBF

Product specificationIRLML6302PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel P-Channel MOSFETVDSS = -20Vl SOT-23 Footprintl Low Profile (

 5.6. Size:914K  cn vbsemi
irlml6302trpbf.pdf

IRLML6302GPBF
IRLML6302GPBF

IRLML6302TRPBFwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATI

 5.7. Size:273K  inchange semiconductor
irlml6302.pdf

IRLML6302GPBF
IRLML6302GPBF

Isc P-Channel MOSFET Transistor IRLML6302FEATURESWith SOT-23 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage -2

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


IRLML6302GPBF
  IRLML6302GPBF
  IRLML6302GPBF
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top