IRLML6302GPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLML6302GPBF
Código: C*
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.54 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 0.78 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 VQgⓘ - Carga de la puerta: 2.4 nC
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 53 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Paquete / Cubierta: SOT23 SOT346
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IRLML6302GPBF Datasheet (PDF)
irlml6302gpbf.pdf
PD - 96159IRLML6302GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel P-Channel MOSFETVDSS = -20Vl SOT-23 Footprintl Low Profile (
irlml6302pbf.pdf
IRLML6302PbFl Generation V Technology HEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETG 1l SOT-23 FootprintVDSS = -20Vl Low Profile (
irlml6302.pdf
PD - 9.1259DIRLML6302HEXFET Power MOSFET Generation V TechnologyD Ultra Low On-Resistance P-Channel MOSFET VDSS = -20V SOT-23 Footprint Low Profile (
irlml6302pbf-1.pdf
IRLML6302PbF-1HEXFET Power MOSFETVDS -20 VRDS(on) max 0.60 G 1(@V = -4.5V)GSQg (typical) 2.4 nC3 DID -0.78 A(@T = 25C)AS 2Micro3TMFeatures BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, In
irlml6302pbf.pdf
PD - 94947BIRLML6302PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel P-Channel MOSFETVDSS = -20Vl SOT-23 Footprintl Low Profile (
irlml6302.pdf
Product specificationIRLML6302PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel P-Channel MOSFETVDSS = -20Vl SOT-23 Footprintl Low Profile (
irlml6302trpbf.pdf
IRLML6302TRPBFwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATI
irlml6302.pdf
Isc P-Channel MOSFET Transistor IRLML6302FEATURESWith SOT-23 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage -2
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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