IRLML6302GPBF - описание и поиск аналогов

PD - 96159 IRLML6302GPbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET VDSS = -20V l SOT-23 Footprint l Low Profile (

PD - 94947B IRLML6302PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET VDSS = -20V l SOT-23 Footprint l Low Profile (

PD - 9.1259D IRLML6302 HEXFET Power MOSFET Generation V Technology D Ultra Low On-Resistance P-Channel MOSFET VDSS = -20V SOT-23 Footprint Low Profile (

IRLML6302PbF-1 HEXFET Power MOSFET VDS -20 V RDS(on) max 0.60 G 1 (@V = -4.5V) GS Qg (typical) 2.4 nC 3 D ID -0.78 A (@T = 25 C) A S 2 Micro3TM Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, In

Product specification IRLML6302PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET VDSS = -20V l SOT-23 Footprint l Low Profile (

IRLML6302TRPBF www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATI

Isc P-Channel MOSFET Transistor IRLML6302 FEATURES With SOT-23 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage -2