IRLML6401PBF Todos los transistores

 ..1. Size:192K  international rectifier
 irlml6401pbf.pdf

IRLML6401PbF l Ultra Low On-Resistance HEXFET Power MOSFET l P-Channel MOSFET l SOT-23 Footprint G 1 l Low Profile (

 0.1. Size:222K  international rectifier
 irlml6401pbf-1.pdf

IRLML6401PbF-1 HEXFET Power MOSFET VDS -12 V RDS(on) max G 1 0.05 (@V = -4.5V) GS Qg (typical) 10 nC 3 D ID -4.3 A S 2 (@T = 25 C) A Micro3 Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Indu

 5.1. Size:195K  international rectifier
 irlml6401gpbf.pdf

PD - 96160 IRLML6401GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (

 5.2. Size:210K  international rectifier
 irlml6401.pdf

PD- 93756C IRLML6401 HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint G 1 Low Profile (

 5.3. Size:823K  shenzhen
 irlml6401.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML6401 G 1 3 D S 2 Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an

 5.4. Size:126K  tysemi
 irlml6401.pdf

Product specification IRLML6401PbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (

 5.5. Size:2328K  kexin
 irlml6401.pdf

SMD Type SM MOSFET P-Channel Enhancement MOSFET IRLML6401 KRLML6401) ( SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4 -0.1 Ultra low on-resistance. 3 P-Channel MOSFET. Fast switching. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Ra

 5.6. Size:2344K  kexin
 irlml6401-3.pdf

SMD Type SM MOSFET P-Channel Enhancement MOSFET IRLML6401 KRLML6401) ( SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 Features 3 Ultra low on-resistance. P-Channel MOSFET. Fast switching. 1 2 +0.02 +0.1 0.15 -0.02 0.95-0.1 +0.1 1.9 -0.2 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol

 5.7. Size:2328K  kexin
 irlml6401 krlml6401.pdf

SMD Type SM MOSFET P-Channel Enhancement MOSFET IRLML6401 KRLML6401) ( SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4 -0.1 Ultra low on-resistance. 3 P-Channel MOSFET. Fast switching. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Ra

 5.8. Size:1252K  slkor
 irlml6401.pdf

IRLML6401 P-Channel Enhancement Mode Field Effect Transistor D ID V(BR)DSS RDS(on)MAX G m @-10V 60 S Equivalent Circuit -30V 70 m -4.2A @-4.5V m @-2.5V 85 FEATURE SOT-23 High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability 1. GATE 2. SOURCE 3. DRAIN D APPLICATION Load Switch for Portable Devic

 5.9. Size:4717K  umw-ic
 irlml6401.pdf

R UMWp UMW IRLML6401 UMW IRLML6401 UMW IRLML6401 Ty P-Channel Enhancement MOSFET Features SOT 23 Ultra low on-resistance. P-Channel MOSFET. Fast switching. 1. BASE 2. EMITTER MARKING 3. COLLECTOR 1F MK Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS 8 Continuous Drain Cu

 5.10. Size:520K  huashuo
 irlml6401.pdf

IRLML6401 P-Ch 20V Fast Switching MOSFETs Description Product Summary The IRLML6401 is the high cell density trenched P- VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 45 m converter applications. ID -4.9 A The IRLML6401 meet the RoHS and Green Product requirement with full function reliability approved

 5.11. Size:258K  cn shikues
 irlml6401.pdf

IRLML6401 P-Channel Enhancement Mode MOSFET Feature DS(ON) GS -16V/-3A, R = 110m (MAX) @V = -4.5V. DS(ON) GS R = 140m (MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low R Reliable and Rugged SOT-23 SOT-23 for Surface Mount Package Applications Power Management Portable Equipment and Battery Powered Systems. A T =25 Unless

 5.12. Size:619K  cn yenji elec
 irlml6401.pdf

IRLML6401 P-Channel Enhancement MOSFET RoHS Device Halogen Free SOT-23 Features l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (

 5.13. Size:914K  cn vbsemi
 irlml6401gtrpbf.pdf

IRLML6401GTRPBF www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICAT

 5.14. Size:913K  cn vbsemi
 irlml6401trpbf.pdf

IRLML6401TRPBF www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATI

 5.15. Size:1774K  cn tech public
 irlml6401.pdf