IRLML6401PbFl Ultra Low On-Resistance HEXFET Power MOSFETl P-Channel MOSFETl SOT-23 FootprintG 1l Low Profile (

IRLML6401PbF-1HEXFET Power MOSFETVDS -12 VRDS(on) max G 10.05 (@V = -4.5V)GSQg (typical) 10 nC 3 DID -4.3 AS 2(@T = 25C)AMicro3Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Indu

PD - 96160IRLML6401GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETl SOT-23 Footprintl Low Profile (

PD- 93756CIRLML6401HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET SOT-23 FootprintG 1 Low Profile (

Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML6401G 13 DS 2DescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremelylow on-resistance per silicon area. This benefit, combinedwith the fast switching speed and ruggedized device designthat power MOSFETs are well known for, providesthe designer with an

Product specificationIRLML6401PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETl SOT-23 Footprintl Low Profile (

SMD TypeSM MOSFETP-Channel Enhancement MOSFETIRLML6401 KRLML6401)(SOT-23Unit: mm+0.12.9 -0.1 Features+0.10.4 -0.1 Ultra low on-resistance.3 P-Channel MOSFET. Fast switching.1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base1. Gate2.Emitter2. Source3. Drain3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Ra

SMD TypeSM MOSFETP-Channel Enhancement MOSFETIRLML6401 KRLML6401)(SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1 Features3 Ultra low on-resistance. P-Channel MOSFET. Fast switching.1 2+0.02+0.10.15 -0.020.95-0.1+0.11.9 -0.21.Base1. Gate2.Emitter2. Source3. Drain3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol

SMD TypeSM MOSFETP-Channel Enhancement MOSFETIRLML6401 KRLML6401)(SOT-23Unit: mm+0.12.9 -0.1 Features+0.10.4 -0.1 Ultra low on-resistance.3 P-Channel MOSFET. Fast switching.1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base1. Gate2.Emitter2. Source3. Drain3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Ra

IRLML6401P-Channel Enhancement Mode Field Effect Transistor D IDV(BR)DSS RDS(on)MAX G m@-10V60S Equivalent Circuit -30V 70 m -4.2A @-4.5Vm@-2.5V85FEATURE SOT-23 High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability 1. GATE 2. SOURCE 3. DRAIN DAPPLICATION Load Switch for Portable Devic

RUMWp UMW IRLML6401UMW IRLML6401UMW IRLML6401TyP-Channel Enhancement MOSFET FeaturesSOT23 Ultra low on-resistance. P-Channel MOSFET. Fast switching.1. BASE 2. EMITTER MARKING3. COLLECTOR1F MK Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -12V Gate-Source Voltage VGS8 Continuous Drain Cu

IRLML6401 P-Ch 20V Fast Switching MOSFETs Description Product Summary The IRLML6401 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 45 m converter applications. ID -4.9 A The IRLML6401 meet the RoHS and Green Product requirement with full function reliability approved

IRLML6401P-Channel Enhancement Mode MOSFETFeatureDS(ON) GS -16V/-3A, R = 110m(MAX) @V = -4.5V.DS(ON) GS R = 140m(MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low R Reliable and RuggedSOT-23 SOT-23 for Surface Mount PackageApplications Power Management Portable Equipment and Battery Powered Systems.AT =25 Unless

IRLML6401 P-Channel Enhancement MOSFETRoHS Device Halogen Free SOT-23 FeatureslUltra Low On-ResistancelP-Channel MOSFETl SOT-23 Footprintl Low Profile (

IRLML6401GTRPBFwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICAT

IRLML6401TRPBFwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATI