IRLHS6342PBF Todos los transistores

 

IRLHS6342PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLHS6342PBF

Código: 6342

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.1 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 8.7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1.1 V

Tiempo de elevación (tr): 13 nS

Conductancia de drenaje-sustrato (Cd): 97 pF

Resistencia drenaje-fuente RDS(on): 0.0155 Ohm

Empaquetado / Estuche: DFN2X2-6

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IRLHS6342PBF Datasheet (PDF)

1.1. irlhs6342pbf.pdf Size:263K _international_rectifier

IRLHS6342PBF
IRLHS6342PBF

IRLHS6342PbF HEXFET® Power MOSFET VDS 30 V TOP VIEW VGS ±12 V D 1 6 D RDS(on) max D 15.5 mΩ D (@VGS = 4.5V) G D 2 D 5 D D Qg (typical) 11 nC S G 3 4 S D ID D S 12 A S (@TC (Bottom) = 25°C) 2mm x 2mm PQFN Applications • Charge and discharge switch for battery application • System/Load Switch Features and Benefits Features Resulting Benefits Low RDSon (≤

3.1. irlhs6376pbf.pdf Size:290K _international_rectifier

IRLHS6342PBF
IRLHS6342PBF

IRLHS6376PbF HEXFET® Power MOSFET VDS 30 V VGS 12 V ± D1 RDS(on) max 63 m G2 Ω (@VGS = 4.5V) S2 D1 D2 RDS(on) max 82 m Ω (@VGS = 2.5V) S1 G1 ID D2 3.4 A (@Tc(Bottom) = 25°C) 2mm x 2mm Dual PQFN Applications • Charge and discharge switch for battery application • Load/System Switch Features and Benefits Features Resulting Benefits Low RDSon (≤ 63mΩ)

 4.1. irlhs6242pbf.pdf Size:219K _international_rectifier

IRLHS6342PBF
IRLHS6342PBF

PD - 97582B IRLHS6242PbF HEXFET® Power MOSFET VDS 20 V VGS V ±12 RDS(on) max 11.7 mΩ D (@VGS = 4.5V) D G D RDS(on) max 15.5 mΩ (@VGS = 2.5V) D ID D S 12 A S (@TC (Bottom) = 25°C) 2mm x 2mm PQFN Applications • Charge and discharge switch for battery application • System/Load Switch Features and Benefits Features Resulting Benefits Low RDSon (≤ 11.7mΩ)

4.2. irlhs6276pbf.pdf Size:288K _international_rectifier

IRLHS6342PBF
IRLHS6342PBF

IRLHS6276PbF HEXFET® Power MOSFET VDS 20 V VGS ±12 V RDS(on) max D1 45 m Ω G2 (@VGS = 4.5V) S2 D1 D2 RDS(on) max 62 m Ω (@VGS = 2.5V) S1 G1 ID D2 3.4 A (@Tc(Bottom) = 25°C) 2mm x 2mm Dual PQFN Applications • Charge and discharge switch for battery application • Load/System Switch Features and Benefits Features Resulting Benefits Low RDSon (≤ 45mΩ)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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