IRLD014PBF Todos los transistores

 

IRLD014PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLD014PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 1.7 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 8.4 nC
   trⓘ - Tiempo de subida: 110 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: DIP4

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IRLD014PBF Datasheet (PDF)

 ..1. Size:1789K  international rectifier
irld014pbf.pdf

IRLD014PBF
IRLD014PBF

PD-95978IRLD014PbF Lead-Free12/20/04Document Number: 91307 www.vishay.com1IRLD014PbFDocument Number: 91307 www.vishay.com2IRLD014PbFDocument Number: 91307 www.vishay.com3IRLD014PbFDocument Number: 91307 www.vishay.com4IRLD014PbFDocument Number: 91307 www.vishay.com5IRLD014PbFDocument Number: 91307 www.vishay.com6IRLD014PbFPeak Diode Recovery

 ..2. Size:1725K  vishay
irld014pbf sihld014.pdf

IRLD014PBF
IRLD014PBF

IRLD014, SiHLD014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 5 V 0.20RoHS* End StackableQg (Max.) (nC) 8.4 COMPLIANT Logic-Level Gate DriveQgs (nC) 2.6Qgd (nC) 6.4 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single 175 C Operating Temperature

 7.1. Size:172K  international rectifier
irld014.pdf

IRLD014PBF
IRLD014PBF

 7.2. Size:1724K  vishay
irld014 sihld014.pdf

IRLD014PBF
IRLD014PBF

IRLD014, SiHLD014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 5 V 0.20RoHS* End StackableQg (Max.) (nC) 8.4 COMPLIANT Logic-Level Gate DriveQgs (nC) 2.6Qgd (nC) 6.4 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single 175 C Operating Temperature

 9.1. Size:170K  international rectifier
irld024.pdf

IRLD014PBF
IRLD014PBF

 9.2. Size:1763K  international rectifier
irld024pbf.pdf

IRLD014PBF
IRLD014PBF

PD- 95981IRLD024PbF Lead-Free12/21/04Document Number: 91308 www.vishay.com1IRLD024PbFDocument Number: 91308 www.vishay.com2IRLD024PbFDocument Number: 91308 www.vishay.com3IRLD024PbFDocument Number: 91308 www.vishay.com4IRLD024PbFDocument Number: 91308 www.vishay.com5IRLD024PbFDocument Number: 91308 www.vishay.com6IRLD024PbFPeak Diode Recovery

 9.3. Size:1692K  vishay
irld024 sihld024.pdf

IRLD014PBF
IRLD014PBF

IRLD024, SiHLD024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 5.0 V 0.10RoHS* End StackableQg (Max.) (nC) 18COMPLIANT Logic-Level Gate DriveQgs (nC) 4.5Qgd (nC) 12 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single 175 C Operating Temperature

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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