IRLD014PBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLD014PBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 1.7
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 8.4
nC
trⓘ - Rise Time: 110
nS
Cossⓘ -
Output Capacitance: 170
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2
Ohm
Package: DIP4
IRLD014PBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLD014PBF
Datasheet (PDF)
..1. Size:1789K international rectifier
irld014pbf.pdf
PD-95978IRLD014PbF Lead-Free12/20/04Document Number: 91307 www.vishay.com1IRLD014PbFDocument Number: 91307 www.vishay.com2IRLD014PbFDocument Number: 91307 www.vishay.com3IRLD014PbFDocument Number: 91307 www.vishay.com4IRLD014PbFDocument Number: 91307 www.vishay.com5IRLD014PbFDocument Number: 91307 www.vishay.com6IRLD014PbFPeak Diode Recovery
..2. Size:1725K vishay
irld014pbf sihld014.pdf
IRLD014, SiHLD014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 5 V 0.20RoHS* End StackableQg (Max.) (nC) 8.4 COMPLIANT Logic-Level Gate DriveQgs (nC) 2.6Qgd (nC) 6.4 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single 175 C Operating Temperature
7.2. Size:1724K vishay
irld014 sihld014.pdf
IRLD014, SiHLD014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 5 V 0.20RoHS* End StackableQg (Max.) (nC) 8.4 COMPLIANT Logic-Level Gate DriveQgs (nC) 2.6Qgd (nC) 6.4 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single 175 C Operating Temperature
9.2. Size:1763K international rectifier
irld024pbf.pdf
PD- 95981IRLD024PbF Lead-Free12/21/04Document Number: 91308 www.vishay.com1IRLD024PbFDocument Number: 91308 www.vishay.com2IRLD024PbFDocument Number: 91308 www.vishay.com3IRLD024PbFDocument Number: 91308 www.vishay.com4IRLD024PbFDocument Number: 91308 www.vishay.com5IRLD024PbFDocument Number: 91308 www.vishay.com6IRLD024PbFPeak Diode Recovery
9.3. Size:1692K vishay
irld024 sihld024.pdf
IRLD024, SiHLD024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 5.0 V 0.10RoHS* End StackableQg (Max.) (nC) 18COMPLIANT Logic-Level Gate DriveQgs (nC) 4.5Qgd (nC) 12 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single 175 C Operating Temperature
Datasheet: WPB4002
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