IRFI4227PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFI4227PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 46 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 26 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 110 nC
   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 460 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO220F

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IRFI4227PBF Datasheet (PDF)

..1. Size:290K international rectifier
irfi4227pbf.pdf

PD - 97036BIRFI4227PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ. 240 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 21 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 47 A and Pass Switch Applications

6.1. Size:200K inchange semiconductor
irfi4227.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI4227FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

7.1. Size:245K international rectifier
irfi4229pbf.pdf

PD - 97201BIRFI4229PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS max250 Vl Key Parameters Optimized for PDP Sustain,VDS (Avalanche) typ.300 V Energy Recovery and Pass Switch Applicationsl Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m38 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C32 A and Pass Switch Applications

7.2. Size:302K international rectifier
irfi4228pbf.pdf

PD - 97228IRFI4228PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS max150 Vl Key Parameters Optimized for PDP Sustain,VDS (Avalanche) typ.180 V Energy Recovery and Pass Switch Applicationsl Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m:12.2 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C61 A and Pass Switch Applicatio

7.3. Size:607K infineon
irfi4229pbf.pdf

IRFI4229PbF Features HEXFET Power MOSFET Advanced Process Technology Key Parameters Key Parameters Optimized for PDP Sustain, VDS max 250 V Energy Recovery and Pass Switch Applications Low EPULSE Rating to Reduce Power VDS (Avalanche) typ. 300 V Dissipation in PDP Sustain, Energy Recovery RDS(ON) typ. @ 10V 38 m and Pass Switch Applications Low QG

7.4. Size:200K inchange semiconductor
irfi4228.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI4228FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

7.5. Size:201K inchange semiconductor
irfi4229.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI4229FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

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