IRFI4227PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFI4227PBF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 46 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 26 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 19 ns
Cossⓘ - Выходная емкость: 460 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
Тип корпуса: TO220F
Аналог (замена) для IRFI4227PBF
IRFI4227PBF Datasheet (PDF)
irfi4227pbf.pdf
PD - 97036BIRFI4227PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ. 240 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 21 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 47 A and Pass Switch Applications
irfi4227.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI4227FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T
irfi4229pbf.pdf
PD - 97201BIRFI4229PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS max250 Vl Key Parameters Optimized for PDP Sustain,VDS (Avalanche) typ.300 V Energy Recovery and Pass Switch Applicationsl Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m38 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C32 A and Pass Switch Applications
irfi4228pbf.pdf
PD - 97228IRFI4228PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS max150 Vl Key Parameters Optimized for PDP Sustain,VDS (Avalanche) typ.180 V Energy Recovery and Pass Switch Applicationsl Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m:12.2 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C61 A and Pass Switch Applicatio
irfi4229pbf.pdf
IRFI4229PbF Features HEXFET Power MOSFET Advanced Process Technology Key Parameters Key Parameters Optimized for PDP Sustain, VDS max 250 V Energy Recovery and Pass Switch Applications Low EPULSE Rating to Reduce Power VDS (Avalanche) typ. 300 V Dissipation in PDP Sustain, Energy Recovery RDS(ON) typ. @ 10V 38 m and Pass Switch Applications Low QG
irfi4228.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI4228FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T
irfi4229.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI4229FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: CPH6354
History: CPH6354
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918