IRFI4410ZGPBF Todos los transistores

 

IRFI4410ZGPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFI4410ZGPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 47 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 43 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 330 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0093 Ohm
   Paquete / Cubierta: TO220F

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IRFI4410ZGPBF Datasheet (PDF)

 ..1. Size:228K  international rectifier
irfi4410zgpbf.pdf

IRFI4410ZGPBF
IRFI4410ZGPBF

PD - 96372IRFI4410ZGPbFHEXFET Power MOSFETApplicationsVDSS 100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.7.9ml Uninterruptible Power Supplyl High Speed Power Switching max. 9.3ml Hard Switched and High Frequency CircuitsID 43ABenefitsDDl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avalanche

 5.1. Size:315K  international rectifier
irfi4410zpbf.pdf

IRFI4410ZGPBF
IRFI4410ZGPBF

PD - 97475AIRFI4410ZPbFHEXFET Power MOSFETApplicationsVDSS 100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.7.9m:l Uninterruptible Power Supplyl High Speed Power Switchingmax. 9.3m:l Hard Switched and High Frequency CircuitsID 43ABenefitsDDl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avala

 5.2. Size:582K  infineon
irfi4410zpbf.pdf

IRFI4410ZGPBF
IRFI4410ZGPBF

IRFI4410ZPbF HEXFET Power MOSFET Applications VDSS 100V High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply RDS(on) typ. 7.9m High Speed Power Switching Hard Switched and High Frequency Circuits RDS(on) max. 9.3mID 43A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capac

 5.3. Size:256K  inchange semiconductor
irfi4410z.pdf

IRFI4410ZGPBF
IRFI4410ZGPBF

isc N-Channel MOSFET Transistor IRFI4410Z,IIRFI4410ZFEATURESLow drain-source on-resistance:RDS(on) 9.3m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDevice for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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