IRFI530G Todos los transistores

 

IRFI530G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFI530G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 42 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 9.7 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Tiempo de elevación (tr): 28 nS

Conductancia de drenaje-sustrato (Cd): 250 pF

Resistencia drenaje-fuente RDS(on): 0.16 Ohm

Empaquetado / Estuche: TO220F

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IRFI530G Datasheet (PDF)

1.1. irfi530g irfi530gpbf.pdf Size:932K _upd

IRFI530G
IRFI530G

IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 100 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) (Ω)VGS = 10 V 0.16 RoHS* COMPLIANT • Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 33 • 175 °C Operating Temperature Qgs (nC) 5.4 • Dynamic dV/dt Rating Qgd (nC) 15 • Low T

1.2. irfi530g.pdf Size:158K _international_rectifier

IRFI530G
IRFI530G

Document Number: 90180 www.vishay.com 575 Document Number: 90180 www.vishay.com 576 Document Number: 90180 www.vishay.com 577 Document Number: 90180 www.vishay.com 578 Document Number: 90180 www.vishay.com 579 Document Number: 90180 www.vishay.com 580 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of i

 3.1. irfi530n.pdf Size:133K _international_rectifier

IRFI530G
IRFI530G

PD - 9.1353A IRFI530N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.11? Fully Avalanche Rated G ID = 12A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-re

3.2. irfi530npbf.pdf Size:223K _international_rectifier

IRFI530G
IRFI530G

PD - 95419 IRFI530NPbF HEXFET® Power MOSFET l Advanced Process Technology l Isolated Package D l High Voltage Isolation = 2.5KVRMS … VDSS = 100V l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated RDS(on) = 0.11Ω l Lead-Free G ID = 12A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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