Справочник MOSFET. IRFI530G

 

IRFI530G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFI530G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 42 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9.7 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 28 ns
   Cossⓘ - Выходная емкость: 250 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для IRFI530G

 

 

IRFI530G Datasheet (PDF)

 ..1. Size:158K  international rectifier
 irfi530g.pdf

IRFI530G IRFI530G

Document Number: 90180 www.vishay.com575Document Number: 90180 www.vishay.com576Document Number: 90180 www.vishay.com577Document Number: 90180 www.vishay.com578Document Number: 90180 www.vishay.com579Document Number: 90180 www.vishay.com580Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as part o

 ..2. Size:932K  vishay
 irfi530g irfi530gpbf sihfi530g.pdf

IRFI530G IRFI530G

IRFI530G, SiHFI530GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = 10 V 0.16RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 33 175 C Operating TemperatureQgs (nC) 5.4 Dynamic dV/dt RatingQgd (nC) 15 Low T

 ..3. Size:275K  inchange semiconductor
 irfi530g.pdf

IRFI530G IRFI530G

iscN-Channel MOSFET Transistor IRFI530GFEATURESLow drain-source on-resistance:RDS(ON) =0.16 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

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 irfi530a irfw530a.pdf

IRFI530G IRFI530G

 7.2. Size:133K  international rectifier
 irfi530n.pdf

IRFI530G IRFI530G

PD - 9.1353AIRFI530NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.11 Fully Avalanche RatedGID = 12ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible

 7.3. Size:223K  international rectifier
 irfi530npbf.pdf

IRFI530G IRFI530G

PD - 95419IRFI530NPbFHEXFET Power MOSFETl Advanced Process Technologyl Isolated PackageDl High Voltage Isolation = 2.5KVRMS VDSS = 100Vl Sink to Lead Creepage Dist. = 4.8mml Fully Avalanche RatedRDS(on) = 0.11l Lead-Free GID = 12ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest

 7.4. Size:501K  infineon
 irfi530npbf.pdf

IRFI530G IRFI530G

IRFI530NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 100V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.11 Fully Avalanche Rated Lead-Free ID 12A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

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History: IRFIB7N50APBF

 

 
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